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Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

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Stress–strain analysis

Stress–strain analysis (or stress analysis) is an engineering discipline that uses many methods to determine the stresses and strains in materials and structures subjected to forces. In continuum mechanics, stress is a physical quantity that expresses the internal forces that neighboring particles of a continuous material exert on each other, while strain is the measure of the deformation of the material. In simple terms we can define stress as the force of resistance per unit area, offered by a body against deformation.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

Pseudoelasticity

Pseudoelasticity, sometimes called superelasticity, is an elastic (reversible) response to an applied stress, caused by a phase transformation between the austenitic and martensitic phases of a crystal. It is exhibited in shape-memory alloys. Pseudoelasticity is from the reversible motion of domain boundaries during the phase transformation, rather than just bond stretching or the introduction of defects in the crystal lattice (thus it is not true superelasticity but rather pseudoelasticity).

Grain boundary

In materials science, a grain boundary is the interface between two grains, or crystallites, in a polycrystalline material. Grain boundaries are two-dimensional defects in the crystal structure, and tend to decrease the electrical and thermal conductivity of the material. Most grain boundaries are preferred sites for the onset of corrosion and for the precipitation of new phases from the solid. They are also important to many of the mechanisms of creep.

Recrystallization (metallurgy)

In materials science, recrystallization is a process by which deformed grains are replaced by a new set of defect-free grains that nucleate and grow until the original grains have been entirely consumed. Recrystallization is usually accompanied by a reduction in the strength and hardness of a material and a simultaneous increase in the ductility. Thus, the process may be introduced as a deliberate step in metals processing or may be an undesirable byproduct of another processing step.

Indium phosphide

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.

Stress–strain curve

In engineering and materials science, a stress–strain curve for a material gives the relationship between stress and strain. It is obtained by gradually applying load to a test coupon and measuring the deformation, from which the stress and strain can be determined (see tensile testing). These curves reveal many of the properties of a material, such as the Young's modulus, the yield strength and the ultimate tensile strength. Generally speaking, curves representing the relationship between stress and strain in any form of deformation can be regarded as stress–strain curves.

Joint dislocation

A joint dislocation, also called luxation, occurs when there is an abnormal separation in the joint, where two or more bones meet. A partial dislocation is referred to as a subluxation. Dislocations are often caused by sudden trauma on the joint like an impact or fall. A joint dislocation can cause damage to the surrounding ligaments, tendons, muscles, and nerves. Dislocations can occur in any major joint (shoulder, knees, etc.) or minor joint (toes, fingers, etc.). The most common joint dislocation is a shoulder dislocation.