Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.) Metal–semiconductor junctions are crucial to the operation of all semiconductor devices. Usually an ohmic contact is desired, so that electrical charge can be conducted easily between the active region of a transistor and the external circuitry. Occasionally however a Schottky barrier is useful, as in Schottky diodes, Schottky transistors, and metal–semiconductor field effect transistors. The critica

Ab initio study of interface states at metal contacts to III-IV semiconductors

Thomas Maxisch

We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of representative abrupt, defect-free, anion-terminated metal/III-V interfaces. Namely, we focused on Al contacts to GaAs(001), AlAs(001) and cubic GaN(001) as well as on Al, Au and Cu junctions to cubic GaN(001). Recent advances in Schottky barrier concepts emphasize the possible relationship between interface states and the formation of the Schottky barrier. We aim at understanding the atomic-scale mechanisms responsible for interface states as well as their role in the Schottky barrier formation process. At As-terminated Al/GaAs(001) and Al/AlAs(001) junctions, resonant and localized interface states occur at the J point of the interface 2D Brillouin zone near the Fermi energy in the semiconductor midgap region. They correspond to intermetallic bonds between the outermost cation atoms of the semiconductor and the interfacial Al atoms of the metal. These interface states derive from an interaction between localized states of the Al(001) surface and semiconductor conduction band states, mediated by localized states of the unreconstructed, As-terminated semiconductor (001) surface. Our results indicate that interface states of the intermetallic, bonding-like kind could play an important role in the transport properties of metal/AlxGa1-xAs junctions. We have also investigated the electronic structure of Al, Au and Cu junctions to cubic, N-terminated GaN(001). The localized interface state reported for As-terminated Al/GaAs(001) and Al/AlAs(001) junctions occurs also at metal/GaN interfaces under the condition that atoms on the outermost atomic plane of the metal are placed in front of the outermost semiconductor cation. This indicates that the formation mechanism of this state is a very general one. In contrast to Al/AlxGa1-xAs junctions, these states occur at energy much larger than EF for the contacts to GaN. Thus, they are not expected to contribute significantly to the electronic transport of the latter interfaces. However, a large number of interface states attributed to d-type orbitals occur over a wide energy range including EF at contacts of noble metals to GaN.

EPFL2003

Evaluation of Cost-Effective Technologies for Highly Efficient Silicon-Based Solar Cells

Luca Gautero

The work underscores the feasibility of highly efficient silicon solar cell structures manufactured with high throughput machines. The main challenge consists in the implementation of more performant structures of intrinsic higher complexity. These structures are meant to be fabricated within similar constraints on time and on cost as for conventional devices of industrial manufacture. Achievements in this direction foster larger economical deployment of this kind of renewable energy. The structure chosen for the implementation of "high efficiency" concepts requires an advanced machining of the silicon substrate. Etching techniques, dielectric coating preparations, and metal to semiconductor contact formation were evaluated for their integration in a complete silicon solar cell fabrication sequence. These sequences were later tested to gain knowledge regarding the effects of the aforementioned advanced processing. Prototypes were created using the fabrication sequence. They were analysed to acquire a further understanding of the advanced processing influences. Statistical interpretation of the data obtained was used to support physical interpretation of the observed phenomena. For one particular implementation of a surface passivation (floating junction passivation) an attempt of modelling aiming to unveil its specific dynamics is reported. A resulting solar cell concept compatible with high throughput equipment achieved a certified efficiency of 18% (VOC = 635 mV, JSC = 37.3 mA/cm2, FF = 76 %) on substrate with a reduced thickness (120 µm). The resulting sequence prepares the back surface with a thermal oxidation for passivation purposes and with a laser technique to locally contact the bulk. The thickness is compatible with the intent of cost reduction through the decrease in material consumption. Other approaches performed on the same substrate achieved 17.1% efficiency (VOC = 617 mV, JSC = 36.1 mA/cm2, FF = 75 %). In this case the passivation was achieved with deposited dielectric layers on the back surface. Furthermore, the investigated dynamics of the floating junction passivation allows for better insight into its traits. The proposed solution has an interesting ratio of efficiency versus costs. The general consequence is a higher market appeal of this particular renewable source on the energy market. The study on the floating junction passivation allows a better exploitation of this particular implementation towards more performant silicon solar cells.

EPFL2010

Ab initio study of interface states at metal contacts to III-IV semiconductors

Thomas Maxisch

EPFL2003

Evaluation of Cost-Effective Technologies for Highly Efficient Silicon-Based Solar Cells

Luca Gautero

EPFL2010

Metal–semiconductor junction

Ab initio study of interface states at metal contacts to III-IV semiconductors

Evaluation of Cost-Effective Technologies for Highly Efficient Silicon-Based Solar Cells

Electronic properties of ideal and engineered metal/semiconductor interfaces

Ab initio study of interface states at metal contacts to III-IV semiconductors

Evaluation of Cost-Effective Technologies for Highly Efficient Silicon-Based Solar Cells

Electronic properties of ideal and engineered metal/semiconductor interfaces