Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth
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Continuous-wave and time-resolved optical spectroscopy is used to examine a variety of InGaN/GaN quantum-well and quantum-box samples. grown by molecular beam epitaxy. The results are analyzed in order to clarify the respective influences of electric field ...
Hydrogen-induced exfoliation combined with wafer bonding has been used to transfer similar to600-nm-thick films of (100) InP to Si substrates. Cross-section transmission electron microscopy (TEM) shows a transferred crystalline InP layer with no observable ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
In this paper, we present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by molecular beam epitaxy. The dot density is significantly reduced from 1 ...
We report the results of photoluminescence (PL), transmission and photoconductance (PC) studies of InxGa1-xN alloys grown by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). First, we demonstrate that PC measurements allow to ...
We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A(1-x)In(x)N layers with ...
When AxGa1-xAs layers are grown on V-grooved GaAs substrates by metal organic chemical vapour deposition (MOCVD), a Ga rich vertical quantum well (VQW) appears in the V-groove centre. The width and Ga enrichment of this structure depend on the nominal Al c ...
We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast ...
Localization phenomena related to the fluctuating band potential profile of the InGaN alloy were investigated via hydrostatic pressure dependent measurements of luminescence of an InGaN quantum structure. We examine the suitability of the hydrostatic press ...
Quantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indium composition by molecular beam epitaxy with i ...
