Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth
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Room-temperature photoreflectance spectroscopy is performed on a series of GaN-AlGaN quantum wells grown by molecular beam epitaxy. We show that the potentialities of this powerful investigation method previously demonstrated on many low-dimensional system ...
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