Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics
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In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and hi ...
We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient in order to overcome the difficulties encountered during ...
A transmission electron microscopy study of a wide range of p-type GaN samples reveals that high Mg doping has a strong influence on the polarity of GaN. The main characteristic of Mg-doped metal organic vapour phase epitaxy (MOVPE) and bulk GaN is the pre ...
AlGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, ...
Impact ionization of exciton states in epitaxial GaN films and GaN/AlGaN quantum-well structures was studied. The study was done using an optical method based on the observation of exciton photoluminescence quenching under application of an electric field. ...
The electrical conductivity of Ce0.992Nb0.008O2−δ was measured as a function of oxygen partial pressure between 10−28 and 1 bar in the temperature range of 873–1173 K. The activation energy for the conductivity at an oxygen partial pressure of 10−4 bar was ...
Recent advances in the application of nontraditional methods and procedures for offline diagnosis and online monitoring of new and service-aged power transformers are discussed. Advanced offline methods are based on the main operational stresses (electrica ...
A new electrically conductive photosensitive composite resist has been formulated and used to build microcomponents. This composite material is based on the SU-8 photopolymer, an insulating negative-tone photoresist, in which silver nano-particles have bee ...
InP films have been deposited on amorphous sapphire substrate by means of the metallorganic chemical vapour deposition technique with and without PH3/H-2 plasma preactivation. Polycrystalline materials, having average grain sizes of about 40 nm, which, how ...
This paper shows our efforts in comunication in oredr to increase the student number in the classical section of electrical engineering. In the field of Power Electronics, aquired know-howw is presented to the students by using electronic and computer tool ...