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Physical Synthesis onto Sea-of-Tiles with Double-Gate Silicon Nanowire Transistors
Related publications (53)
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Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Zhenyu Wang, Ahmet Avsar, Yanfei Zhao, Guilherme Migliato Marega
The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-me ...
2020Wide-field time-gated SPAD imager for phasor-based FLIM applications
Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Andrei Ardelean, Arin Can Ülkü
We describe the performance of a new wide area time-gated single-photon avalanche diode (SPAD) array for phasor-FLIM, exploring the effect of gate length, gate number and signal intensity on the measured lifetime accuracy and precision. We conclude that th ...
IOP2020Wide-Field Time-Gated SPAD Imager for Phasor-Based FLIM Applications
Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Andrei Ardelean, Arin Can Ülkü
We describe the performance of a new wide area time-gated single-photon avalanche diode (SPAD) array for phasor-FLIM, exploring the e!ect of gate length, gate number and signal intensity on the measured lifetime accuracy and precision. We conclude that the ...
2020High-performance normally-off tri-gate GaN power MOSFETs
Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu
In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...
IEEE2019Exploration of Negative Capacitance Devices and Technologies
Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...
EPFL2019A Magnet-Based Timing System to Detect Gate Crossings in Alpine Ski Racing
Kamiar Aminian, Benedikt Fasel
In alpine skiing, intermediate times are usually measured with photocells. However, for practical reasons, the number of intermediate cells is limited to three⁻four, making a detailed timing analysis difficult. In this paper, we propose and validate a magn ...
2019Steady state in experimentally produced turbidity current under a large amount of suspension supply
Giovanni De Cesare, Shun Nomura, Jumpei Hitomi
Turbidity current is generated in an inclined lock-gate flume under a large amount of suspension supply. By opening the gate, turbidity current generates and flows to downstream. The turbidity current maintains its interface structure and progresses with c ...
2019Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation
Mihai Adrian Ionescu, Christian Enz, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi, Francesco Bellando
This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative ca ...
IEEE2017