Publication

Intrinsic defects in GaAs and In GaAs through hybrid functional calculations

Related publications (49)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Intrinsic defects in GaAs and In GaAs through hybrid functional calculations

Graph Chatbot

Chat with Graph Search

Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Arsenic related defect states resonant with the semiconductor conduction band at the In0.53Ga0.47As/oxide interface: A density functional study

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

Interfacial Ga-As suboxide: Structural and electronic properties

First-principles determination of defect energy levels through hybrid density functionals and GW

Band alignment and chemical bonding at the GaAs/Al2O3 interface: A hybrid functional study

Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond

Band offsets of lattice-matched semiconductor heterojunctions through hybrid functionals and G(0)W(0)

Electron and Hole Mobilities in Single-Layer WSe2