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Growth of graded doped Si/SiGe Heterostructure Tunnel FET

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Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Quantum tunnelling

In physics, quantum tunnelling, barrier penetration, or simply tunnelling is a quantum mechanical phenomenon in which an object such as an electron or atom passes through a potential energy barrier that, according to classical mechanics, the object does not have sufficient energy to enter or surmount. Tunneling is a consequence of the wave nature of matter, where the quantum wave function describes the state of a particle or other physical system, and wave equations such as the Schrödinger equation describe their behavior.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Graded vector space

In mathematics, a graded vector space is a vector space that has the extra structure of a grading or gradation, which is a decomposition of the vector space into a direct sum of vector subspaces, generally indexed by the integers. For "pure" vector spaces, the concept has been introduced in homological algebra, and it is widely used for graded algebras, which are graded vector spaces with additional structures. Let be the set of non-negative integers.

Graded (mathematics)

In mathematics, the term "graded" has a number of meanings, mostly related: In abstract algebra, it refers to a family of concepts: An algebraic structure is said to be -graded for an index set if it has a gradation or grading, i.e. a decomposition into a direct sum of structures; the elements of are said to be "homogeneous of degree i ". The index set is most commonly or , and may be required to have extra structure depending on the type of . Grading by (i.e. ) is also important; see e.g. signed set (the -graded sets).

Band gap

In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band.

Graded ring

In mathematics, in particular abstract algebra, a graded ring is a ring such that the underlying additive group is a direct sum of abelian groups such that . The index set is usually the set of nonnegative integers or the set of integers, but can be any monoid. The direct sum decomposition is usually referred to as gradation or grading. A graded module is defined similarly (see below for the precise definition). It generalizes graded vector spaces. A graded module that is also a graded ring is called a graded algebra.

High-electron-mobility transistor

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.

Electronic band structure

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called band gaps or forbidden bands). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules.