Energy densityIn physics, energy density is the amount of energy stored in a given system or region of space per unit volume. It is sometimes confused with energy per unit mass which is properly called specific energy or . Often only the useful or extractable energy is measured, which is to say that inaccessible energy (such as rest mass energy) is ignored. In cosmological and other general relativistic contexts, however, the energy densities considered are those that correspond to the elements of the stress-energy tensor and therefore do include mass energy as well as energy densities associated with pressure.
EpitaxyEpitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material.
Wide-bandgap semiconductorWide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Clock gatingIn computer architecture, clock gating is a popular power management technique used in many synchronous circuits for reducing dynamic power dissipation, by removing the clock signal when the circuit is not in use or ignores clock signal. Clock gating saves power by pruning the clock tree, at the cost of adding more logic to a circuit. Pruning the clock disables portions of the circuitry so that the flip-flops in them do not have to switch states. Switching states consumes power.
Digital signal processorA digital signal processor (DSP) is a specialized microprocessor chip, with its architecture optimized for the operational needs of digital signal processing. DSPs are fabricated on MOS integrated circuit chips. They are widely used in audio signal processing, telecommunications, , radar, sonar and speech recognition systems, and in common consumer electronic devices such as mobile phones, disk drives and high-definition television (HDTV) products. The goal of a DSP is usually to measure, filter or compress continuous real-world analog signals.
Subthreshold conductionSubthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its threshold voltage, which is the minimum gate voltage required to switch the device between on and off states.
Semiconductor deviceA semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.
Power densityPower density is the amount of power (time rate of energy transfer) per unit volume. In energy transformers including batteries, fuel cells, motors, power supply units etc., power density refers to a volume, where it is often called volume power density, expressed as W/m3. In reciprocating internal combustion engines, power density (power per swept volume or brake horsepower per cubic centimeter) is an important metric, based on the internal capacity of the engine, not its external size.
Band gapIn solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band.
