Are you an EPFL student looking for a semester project?
Work with us on data science and visualisation projects, and deploy your project as an app on top of GraphSearch.
Publication
Are you an EPFL student looking for a semester project?
Work with us on data science and visualisation projects, and deploy your project as an app on top of GraphSearch.
This paper presents an explicit drain current model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor. Analytical relationships for the channel charge densities and for the drain current are derived as explicit functions of applied terminal voltages and structural parameters. The model is validated with 2D numerical simulations for a large range of channel thicknesses and is found to be very accurate for doping densities exceeding 10(18) cm(-3), which are actually used for such devices. (C) 2013 Elsevier Ltd. All rights reserved.