This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Element Analysis for a high-control fabrication process of vertical Si-fins on bulk and we provide many useful fabrication expedients. Metal gate FinFETs have been successfully electrically characterized, showing excellent subthreshold slope SS = 72 mV/dec and high I-on/I-off approximate to 10(6) ratio, with power consumption of the order of tens of nW. The FinFETs have also been proved to correctly behave in a liquid environment. We also present the HfO2 characterization towards full pH response sensing applications. (C) 2014 Elsevier Ltd. All rights reserved.
Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino
Elison de Nazareth Matioli, Armin Jafari, Riyaz Mohammed Abdul Khadar, Minghua Zhu