Ultra-Low-Temperature Silicon and Germanium-on-Silicon Avalanche Photodiodes
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A semiconductor photodiode (18) is formed as a pn-junction between a region (2) of a first conductivity type and a region (6) of a second conductivity type. The region (6) of the second conductivity type is approximately hemispherical. A mini guard ring (8 ...
The first part of this thesis describes the development of an optimised LSO/LuYAP phoswich detector head for the ClearPET demonstrator positron emission tomograph (PET) dedicated to small animals that is under construction in Lausanne within the Crystal Cl ...
We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient in order to overcome the difficulties encountered during ...
This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
An avalanche photodiode array uses single-photon counting to perform time-of-flight range-finding on a scene uniformly hit by 100ps 250mW uncollimated laser pulses. The 32x32 pixel sensor, fabricated in a 0.8μm CMOS process uses a microscanner package to e ...
Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
Preliminary radiation tests of hydrogenated amorphous silicon n-i-p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of th ...
The design and characterization of an imaging system is presented for depth information capture of arbitrary three-dimensional (3-D) objects. The core of the system is an array of 32 × 32 rangefinding pixels that independently measure the time-of-flight of ...
A solid-state imager fabricated in CMOS technology is presented for depth information capture of arbitrary 3D objects with millimeter resolution. The system is based on an array of 32x32 pixels that independently measure the time-of-flight of a ray of ligh ...
We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detect ...