Low-density parity-check codeIn information theory, a low-density parity-check (LDPC) code is a linear error correcting code, a method of transmitting a message over a noisy transmission channel. An LDPC code is constructed using a sparse Tanner graph (subclass of the bipartite graph). LDPC codes are , which means that practical constructions exist that allow the noise threshold to be set very close to the theoretical maximum (the Shannon limit) for a symmetric memoryless channel.
Error detection and correctionIn information theory and coding theory with applications in computer science and telecommunication, error detection and correction (EDAC) or error control are techniques that enable reliable delivery of digital data over unreliable communication channels. Many communication channels are subject to channel noise, and thus errors may be introduced during transmission from the source to a receiver. Error detection techniques allow detecting such errors, while error correction enables reconstruction of the original data in many cases.
Flash memoryFlash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
Semiconductor memorySemiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell.
Random-access memoryRandom-access memory (RAM; ræm) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
Error correction codeIn computing, telecommunication, information theory, and coding theory, forward error correction (FEC) or channel coding is a technique used for controlling errors in data transmission over unreliable or noisy communication channels. The central idea is that the sender encodes the message in a redundant way, most often by using an error correction code or error correcting code (ECC). The redundancy allows the receiver not only to detect errors that may occur anywhere in the message, but often to correct a limited number of errors.
Turbo codeIn information theory, turbo codes (originally in French Turbocodes) are a class of high-performance forward error correction (FEC) codes developed around 1990–91, but first published in 1993. They were the first practical codes to closely approach the maximum channel capacity or Shannon limit, a theoretical maximum for the code rate at which reliable communication is still possible given a specific noise level. Turbo codes are used in 3G/4G mobile communications (e.g.
Computer memoryComputer memory stores information, such as data and programs for immediate use in the computer. The term memory is often synonymous with the term primary storage or main memory. An archaic synonym for memory is store. Computer memory operates at a high speed compared to storage which is slower but less expensive and higher in capacity. Besides storing opened programs, computer memory serves as disk cache and write buffer to improve both reading and writing performance.
Dynamic random-access memoryDynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.
Concatenated error correction codeIn coding theory, concatenated codes form a class of error-correcting codes that are derived by combining an inner code and an outer code. They were conceived in 1966 by Dave Forney as a solution to the problem of finding a code that has both exponentially decreasing error probability with increasing block length and polynomial-time decoding complexity. Concatenated codes became widely used in space communications in the 1970s.
