Growth mechanisms of III-V semiconductor nanostructures on silicon
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For pt.II see ibid. vol.73, p.7690 (1993). In order to investigate the interface between polycrystalline-silicon (poly-Si) and crystalline silicon (c-Si), which is of crucial importance for the passivation of high-voltage devices, an infrared diagnostic me ...
A bulk GaN half-wave (lambda /2) cavity is grown on Si(Ill) substrate by molecular beam epitaxy. It is embedded between twelve AlN/(Al,Ga)N quaterwave stacks and the silicon substrate, which acts as a metallic bottom mirror in the investigated wavelength r ...
We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient in order to overcome the difficulties encountered during ...
We report on a 2×2 SOI switch, based on the plasma dispersion effect, reaching 5 MHz of switching frequency. Measured insertion losses, extinction ratio and crosstalk at 1300 nm and 1550 nm are presented and discussed. ...
We have designed and realised a new type of microsystem for the electrical characterisation of arrays of living cells for biomedical diagnostic purposes. We have used deep plasma etching for the fabrication of microholes and micro-fluidic channels in silic ...
The growth of GaN and InxGa1-xN on c-plane sapphire substrates was carried out by molecular beam epitaxy using NH3. bl situ reflection high-energy electron diffraction (RHEED) was used to monitor the growth process. Oscillations of the specular beam intens ...
It is shown that during the growth of InxGa1-xAs on GaAs, the strain-induced lattice distortion oscillates as a function of monolayer completion in both purely 2D and quasi-2D layer-by-layer growth regimes. This is explained by considering that nontetragon ...
In contrast to optical immunosensors, the electrochemical detection of an immunoanalytical reaction does require a labeling, but allows an easier discrimination of specific and non-specific binding. We present a concept and first results for a multivalent ...
Microcavity light-emitting diodes (MCLEDs) with top-emitting geometry have been grown by molecular beam epitaxy on GaAs and Si substrates. External quantum efficiencies of up to 10% were obtained for 420 x 420 mu m(2) homoepitaxial devices. The efficiency ...
Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on Silicon. In this technique, the growth of the m-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V ...
