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InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

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InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

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Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

P-type InGaN across the entire alloy composition range

Hybrid axial and radial Si-GaAs heterostructures in nanowires

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth

Mg doping for p-type AlInN lattice-matched to GaN

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures

Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substrate

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates