MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
High-electron-mobility transistorA high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.
HeterojunctionA heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably.
Fractal dimensionIn mathematics, a fractal dimension is a term invoked in the science of geometry to provide a rational statistical index of complexity detail in a pattern. A fractal pattern changes with the scale at which it is measured. It is also a measure of the space-filling capacity of a pattern, and it tells how a fractal scales differently, in a fractal (non-integer) dimension. The main idea of "fractured" dimensions has a long history in mathematics, but the term itself was brought to the fore by Benoit Mandelbrot based on his 1967 paper on self-similarity in which he discussed fractional dimensions.
Neutrino oscillationNeutrino oscillation is a quantum mechanical phenomenon in which a neutrino created with a specific lepton family number ("lepton flavor": electron, muon, or tau) can later be measured to have a different lepton family number. The probability of measuring a particular flavor for a neutrino varies between three known states, as it propagates through space. First predicted by Bruno Pontecorvo in 1957, neutrino oscillation has since been observed by a multitude of experiments in several different contexts.
Gallium arsenideGallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
Transmission electron microscopyTransmission electron microscopy (TEM) is a microscopy technique in which a beam of electrons is transmitted through a specimen to form an image. The specimen is most often an ultrathin section less than 100 nm thick or a suspension on a grid. An image is formed from the interaction of the electrons with the sample as the beam is transmitted through the specimen. The image is then magnified and focused onto an imaging device, such as a fluorescent screen, a layer of photographic film, or a sensor such as a scintillator attached to a charge-coupled device.
ElectronThe electron (_Electron or _beta-) is a subatomic particle with a negative one elementary electric charge. Electrons belong to the first generation of the lepton particle family, and are generally thought to be elementary particles because they have no known components or substructure. The electron's mass is approximately 1/1836 that of the proton. Quantum mechanical properties of the electron include an intrinsic angular momentum (spin) of a half-integer value, expressed in units of the reduced Planck constant, ħ.
Hausdorff dimensionIn mathematics, Hausdorff dimension is a measure of roughness, or more specifically, fractal dimension, that was introduced in 1918 by mathematician Felix Hausdorff. For instance, the Hausdorff dimension of a single point is zero, of a line segment is 1, of a square is 2, and of a cube is 3. That is, for sets of points that define a smooth shape or a shape that has a small number of corners—the shapes of traditional geometry and science—the Hausdorff dimension is an integer agreeing with the usual sense of dimension, also known as the topological dimension.
Electron diffractionElectron diffraction refers to changes in the direction of electron beams due to interactions with atoms. Close to the atoms the changes are described as Fresnel diffraction; far away they are called Fraunhofer diffraction. The resulting map of the directions of the electrons far from the sample (Fraunhofer diffraction) is called a diffraction pattern, see for instance Figure 1. These patterns are similar to x-ray and neutron diffraction patterns, and are used to study the atomic structure of gases, liquids, surfaces and bulk solids.
