Quantum Hall effectThe quantum Hall effect (or integer quantum Hall effect) is a quantized version of the Hall effect which is observed in two-dimensional electron systems subjected to low temperatures and strong magnetic fields, in which the Hall resistance Rxy exhibits steps that take on the quantized values where VHall is the Hall voltage, Ichannel is the channel current, e is the elementary charge and h is Planck's constant. The divisor ν can take on either integer (ν = 1, 2, 3,...) or fractional (ν = 1/3, 2/5, 3/7, 2/3, 3/5, 1/5, 2/9, 3/13, 5/2, 12/5,.
Fractional quantum Hall effectThe fractional quantum Hall effect (FQHE) is a physical phenomenon in which the Hall conductance of 2-dimensional (2D) electrons shows precisely quantized plateaus at fractional values of . It is a property of a collective state in which electrons bind magnetic flux lines to make new quasiparticles, and excitations have a fractional elementary charge and possibly also fractional statistics.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
TransistorA transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.
Quantum opticsQuantum optics is a branch of atomic, molecular, and optical physics dealing with how individual quanta of light, known as photons, interact with atoms and molecules. It includes the study of the particle-like properties of photons. Photons have been used to test many of the counter-intuitive predictions of quantum mechanics, such as entanglement and teleportation, and are a useful resource for quantum information processing. Light propagating in a restricted volume of space has its energy and momentum quantized according to an integer number of particles known as photons.
Silicon–germaniumSiGe (ˈsɪɡiː or ˈsaɪdʒiː), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture.
Strained siliconStrained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon.
Hall effectThe Hall effect is the production of a potential difference (the Hall voltage) across an electrical conductor that is transverse to an electric current in the conductor and to an applied magnetic field perpendicular to the current. It was discovered by Edwin Hall in 1879. The Hall coefficient is defined as the ratio of the induced electric field to the product of the current density and the applied magnetic field. It is a characteristic of the material from which the conductor is made, since its value depends on the type, number, and properties of the charge carriers that constitute the current.
Silicon on sapphireSilicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 μm) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies. Typically, high-purity artificially grown sapphire crystals are used. The silicon is usually deposited by the decomposition of silane gas (SiH4) on heated sapphire substrates.
Topological quantum computerA topological quantum computer is a theoretical quantum computer proposed by Russian-American physicist Alexei Kitaev in 1997. It employs quasiparticles in two-dimensional systems, called anyons, whose world lines pass around one another to form braids in a three-dimensional spacetime (i.e., one temporal plus two spatial dimensions). These braids form the logic gates that make up the computer. The advantage of a quantum computer based on quantum braids over using trapped quantum particles is that the former is much more stable.
