Low-frequency noise in pseudomorphically grown In0.52Al0.48As/In0.7Ga0.3As/InP HEMTS as a function of channel thickness
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A portable voice capture device comprising: an orientable arm with a first differential array of microphones comprising at least one pair of microphones, the directivity of said first array being arranged for sensing voice from a first direction depending ...
This paper presents analytical expressions for channel noise, induced gate noise (IGN), and cross-correlation noise in a long-channel junctionless (JL) double-gate MOSFET. The analytical relationships, which have been derived from a coherent charge-based m ...
A portable voice capture device comprising: an orientable arm with a first differential array of microphones comprising at least one pair of microphones, the directivity of said first array being arranged for sensing voice from a first direction depending ...
After years of intensive research effort, the design of RF integrated circuits in CMOS has now reached a wide acceptance for industrial designs. This is due to the high unity gain frequency and low-noise performance of today's deep sub micrometer MOS trans ...
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In October 2010, researchers from diverse backgrounds collided at the historic Cumberland Lodge (Windsor, UK) to discuss the role of randomness in cell and developmental biology. Organized by James Briscoe and Alfonso Marinez-Arias, The Company of Biologis ...
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