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Large area deposition in high vacuum with high thickness uniformity

Patrik Willi Hoffmann, Simone Amorosi, Giacomo Benvenuti
2004
Patent
Abstract

The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

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