Physical vapor depositionPhysical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation.
Chemical vapor depositionChemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.
Plasma-enhanced chemical vapor depositionPlasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) (alternating current (AC)) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.
Sputter depositionSputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K).
Pulsed laser depositionPulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique where a high-power pulsed laser beam is focused inside a vacuum chamber to strike a target of the material that is to be deposited. This material is vaporized from the target (in a plasma plume) which deposits it as a thin film on a substrate (such as a silicon wafer facing the target). This process can occur in ultra high vacuum or in the presence of a background gas, such as oxygen which is commonly used when depositing oxides to fully oxygenate the deposited films.
TokamakA tokamak (ˈtoʊkəmæk; токамáк) is a device which uses a powerful magnetic field to confine plasma in the shape of a torus. The tokamak is one of several types of magnetic confinement devices being developed to produce controlled thermonuclear fusion power. , it was the leading candidate for a practical fusion reactor. Tokamaks were initially conceptualized in the 1950s by Soviet physicists Igor Tamm and Andrei Sakharov, inspired by a letter by Oleg Lavrentiev. The first working tokamak was attributed to the work of Natan Yavlinsky on the T-1 in 1958.
Scheme (mathematics)In mathematics, a scheme is a mathematical structure that enlarges the notion of algebraic variety in several ways, such as taking account of multiplicities (the equations x = 0 and x2 = 0 define the same algebraic variety but different schemes) and allowing "varieties" defined over any commutative ring (for example, Fermat curves are defined over the integers). Scheme theory was introduced by Alexander Grothendieck in 1960 in his treatise "Éléments de géométrie algébrique"; one of its aims was developing the formalism needed to solve deep problems of algebraic geometry, such as the Weil conjectures (the last of which was proved by Pierre Deligne).
Electron-beam physical vapor depositionElectron-beam physical vapor deposition, or EBPVD, is a form of physical vapor deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum. The electron beam causes atoms from the target to transform into the gaseous phase. These atoms then precipitate into solid form, coating everything in the vacuum chamber (within line of sight) with a thin layer of the anode material.
Formal schemeIn mathematics, specifically in algebraic geometry, a formal scheme is a type of space which includes data about its surroundings. Unlike an ordinary scheme, a formal scheme includes infinitesimal data that, in effect, points in a direction off of the scheme. For this reason, formal schemes frequently appear in topics such as deformation theory. But the concept is also used to prove a theorem such as the theorem on formal functions, which is used to deduce theorems of interest for usual schemes.
Edge-localized modeAn edge-localized mode (ELM) is a plasma instability occurring in the edge region of a tokamak plasma due to periodic relaxations of the edge transport barrier in high-confinement mode. Each ELM burst is associated with expulsion of particles and energy from the confined plasma into the scrape-off layer. This phenomenon was first observed in the ASDEX tokamak in 1981. Diamagnetic effects in the model equations expand the size of the parameter space in which solutions of repeated sawteeth can be recovered compared to a resistive MHD model.
