Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs
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An experimental method is demonstrated for the determination of internal quantum efficiency (IQE) in III-nitride-based light-emitting diodes (LEDs). LED devices surrounded with an optically absorbing material have been fabricated to limit collected light t ...
We report a full optical deep sub-wavelength imaging of the vectorial components of the electric local density of states for the confined modes of a modified GaN L3 photonic crystal nanocavity. The mode mapping is obtained with a scanning near-field optica ...
The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...
For GaN-based microcavity light emitters, such as vertical-cavity surface-emitting lasers (VCSELs) and resonantcavity light emitting diodes (RCLEDs) in the blue-green wavelength regime, achieving a high reflectivity wide bandwidth feedback mirror is truly ...
Light-emitting diodes are becoming the alternative for future general lighting applications, with huge energy savings compared to conventional light sources owing to their high efficiency and reliability. Polarized light sources would largely enhance the e ...
The enhancement of the extraction efficiency in light emitting diodes (LEDs) through the use of photonic crystals (PhCs) requires a structure design that optimizes the interaction of the guided modes with the PhCs. The main optimization parameters are rela ...
Nowadays, light emitting diodes (LEDs) and laser diodes (LDs) are part of our daily life. More and more devices incorporate InGaN-based optoelectronic devices. In fact, since the first demonstration of a candela-class InGaN-based LED in the beginning of th ...
Thin-film InGaN photonic crystal (PhC) light-emitting diodes (LEDs) with a total semiconductor thickness of either 800 nm or 3.45 mu m were fabricated and characterized. Increased directional radiance relative to Lambertian emission was observed for both c ...
The main emission characteristics of electrically driven polariton lasers based on planar GaN microcavities with embedded InGaN quantum wells are studied theoretically. The polariton emission dependence on pump current density is first modeled using a set ...
The specificities of polariton lasers-a new generation of coherent light-emitting devices where the relaxation of the bosonic quasiparticles responsible for the light emission, the polaritons, is stimulated whereas the photon emission process issued from t ...