Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs
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A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
It was about 125 years ago that the light bulb was commercialized by Thomas Edison. No doubt a brilliant invention at the time, today its low power conversion efficiency is one of the reasons why lighting in the western world has such high energy consumpti ...
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/ ...
Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures with a near-singular density of states. Implemented as the active medium in a diode laser their unique properties lead to improved and often novel characteris ...
Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction ...
The use of photonic crystals (PCs) for realistic light emitting diodes (LEDs) is discussed, given the constraints of planar semiconductor technology. A viable route for the fabrication of high-efficiency high-brightness electrically injected LEDs is presen ...
Novel 1310 nm and 1550 nm optically pumped VECSELs based on wafer fused InAlGaAs/InPAlGaAs/GaAs gain mirrors demonstrate high CW fundamental mode continuous wave output in excess of 2 W at room temperature. ...
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A blue resonant cavity light emitting diode with a 50% Al-content crack-free GaN/AlGaN distributed Bragg reflector is reported. The structure shows excellent optical properties and the benefits of the cavity structure are clearly seen in the narrowed spect ...
Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colours which can be combined, particularly to obtain white light. M ...