Publications related to Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

\times

(8

\times

8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

Low-Cost Readout Electronics for Piezoresistive MEMS-Based Transducers

Marco Mattavelli, Diego Ruben Barrettino

The designs fabrication and testing of low-cost readout electronics for piezoresistive MEMS-based transducers are presented in this paper. The proposed circuit architecture has a low input referred noise power spectral density of 60nV/root Hz a latency of ...

IEEE2019

Photoluminescence Lifetime Sensor Pixels using SPADs and Silicon LEDs in Commercial CMOS

Edoardo Charbon

Here we report the first known integration of CMOS fabricated silicon light-emitting diodes (SiLED) with single photon avalanche diodes (SPAD) for monolithic optics-free photoluminescence lifetime sensor pixel. We show preliminary results of the photo-exci ...

IEEE2019

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Fabien Patrick Wildhaber, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

IEEE2019

AC/DC Ratio Enhancement in Photoplethysmography Using a Pinned Photodiode

Christian Enz, Assim Boukhayma, Antonino Caizzone

Photoplethysmography (PPG) enables non-invasive vitals monitoring. Nevertheless, it is intrinsically limited by the extremely small AC/DC ratio, also called perfusion-index (PI). This increases the dynamic-range requirements to reliably process the PPG wav ...

2019

Health monitoring device

Christian Enz, Assim Boukhayma, Antonino Caizzone

The invention relates to a photoplethysmography (PPG) sensing device comprising - a pulsed light source, - at least one pixel to create photo-generated electrons, synchronized with said pulsed light source. It is mainly characterized in that each pixel com ...

2019

A 30-frames/s, 252 x 144 SPAD Flash LiDAR With 1728 Dual-Clock 48.8-ps TDCs, and Pixel-Wise Integrated Histogramming

Edoardo Charbon, Ivan Michel Antolovic, Chunmin Zhang, Scott Anthony Lindner, Juan Mata Pavia, Martin Wolf

A 252 x 144 single-photon avalanche diode (SPAD) pixel sensor, called Ocelot, is reported for light detection and ranging (LiDAR). The sensor, fabricated in the 180-nm CMOS technology, features 1728 12-bit time-to-digital converters (TDCs) with 48.8-ps res ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Oscillator arrangement for time-to-digital converter for large array of time-of-flight image sensor devices

Edoardo Charbon, Preethi Padmanabhan, Augusto Ronchini Ximenes

An oscillator arrangement for time-to-digital converters for a 3D image sensor device includes a plurality of oscillators arranged as an array each oscillator being associated to one time-to-digital converter, and at least one coupling unit respectively ar ...

2019

Self-Heating Aware Design of ICs in Deep Sub-Micron FDSOI and Bulk Technologies

Can Baltaci

Bulk CMOS technologies left the semiconductor market to the novel device geometries such as FDSOI and FinFET below 30 nm, mainly due to their insufficient electrical characteristics arising from different physical limitations. These innovative solutions en ...

EPFL2018

Cryogenic MOS Transistor Model

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes. The model is dev ...

2018

Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors

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A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Low-Cost Readout Electronics for Piezoresistive MEMS-Based Transducers

Photoluminescence Lifetime Sensor Pixels using SPADs and Silicon LEDs in Commercial CMOS

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

AC/DC Ratio Enhancement in Photoplethysmography Using a Pinned Photodiode

Health monitoring device

A 30-frames/s, 252 x 144 SPAD Flash LiDAR With 1728 Dual-Clock 48.8-ps TDCs, and Pixel-Wise Integrated Histogramming

Oscillator arrangement for time-to-digital converter for large array of time-of-flight image sensor devices

Self-Heating Aware Design of ICs in Deep Sub-Micron FDSOI and Bulk Technologies

Cryogenic MOS Transistor Model

Self-Heating Aware Design of ICs in Deep Sub-Micron FDSOI and Bulk Technologies

Low-Cost Readout Electronics for Piezoresistive MEMS-Based Transducers

Health monitoring device

Cryogenic MOS Transistor Model

Photoluminescence Lifetime Sensor Pixels using SPADs and Silicon LEDs in Commercial CMOS

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

AC/DC Ratio Enhancement in Photoplethysmography Using a Pinned Photodiode

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Oscillator arrangement for time-to-digital converter for large array of time-of-flight image sensor devices

A 30-frames/s, 252 x 144 SPAD Flash LiDAR With 1728 Dual-Clock 48.8-ps TDCs, and Pixel-Wise Integrated Histogramming