Explaining Morphological and Electrical Features of Boron-doped Zinc Oxide to Tailor New Electrodes for Photovoltaics
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Titanium dioxide (TiO2) is a widely investigated material for its biological compatibility, high dielectric constant and refractive index, chemical and mechanical resistance, and catalytic activity. Several different techniques are available to produce TiO ...
Zinc oxide (ZnO) is a material that belongs to the family of Transparent Conductives Oxides (TCO). Its non-toxicity and the abundant availability in the Earth's crust of its components make it an ideal candidate as electrical transparent contact for thin-f ...
In the past, conducting AFM probes have been made by coating standard Si-cantilevers and tips with a thin film of e.g. tungsten (W). Here, we describe a new AFM probe made entirely out of tungsten. The fabrication involves microfabrication techniques such ...
Porous silicon (PS) thin films have been prepd. by electrochem. anodization of p-Si in HF-H2O-EtOH soln. and they have been used as substrate material for the prepn. of iridium oxide based electrodes (PS/IrO2) using the thermal decompn. technique. The morp ...
A study of the i-layer porosity as a function of the deposition parameters by PECVD technique, is presented here. It is demonstrated in particular, that for a fixed deposition rate of 2 Å/s, increasing the plasma power tends to increase the layer density, ...
In the following, we report investigations of the dependencies of the structural, optical and electrical characteristics of InN thin films grown by MOCVD on the growth temperature. The layer thicknesses range from 70 to 400 nm. Their carrier concentrations ...
Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substr ...
Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 ...
The qualitative description of the major microstructure characteristics of microcrystalline silicon is achieved through a three-dimensional discrete dynamical growth model. The model is based on three fundamental processes that determine surface morphology ...
We report here on ferromagnetic/superconductor FM/SC and SC/FM double layers deposited without a buffer layer between FM and SC. Thin films of La0.7Sr0.3MnO3 (LSMO) are used for the FM, and YBa2Cu3O7-x (YBCO) for the SC. Both films can grow crystalline on ...