Publications related to Surface origin and control of resonance Raman scattering and surface band gap in indium nitride

Terahertz surface modes and electron-phonon coupling on Bi2Se3(111)

We present a combined experimental and theoretical study of the surface vibrational modes of the topological insulator Bi2Se3 with particular emphasis on the low-energy region below 10 meV that has been difficult to resolve experimentally. By applying inel ...

AMER PHYSICAL SOC2020

Light-Induced Renormalization of the Dirac Quasiparticles in the Nodal-Line Semimetal ZrSiSe

Majed Chergui, Marco Grioni, Arnaud Magrez, Helmuth Berger, Philippe Bugnon, Alberto Crepaldi, Luca Moreschini, Simon Karl Moser, Gianmarco Gatti, Serhii Polishchuk

In nodal-line semimetals, linearly dispersing states form Dirac loops in the reciprocal space with a high degree of electron-hole symmetry and a reduced density of states near the Fermi level. The result is reduced electronic screening and enhanced correla ...

2020

Optical conductivity of the type-II Weyl semimetal TaIrTe4

Ana Akrap, Konstantin Semeniuk

TaIrTe4 is an example of a candidate Weyl type-II semimetal with a minimal possible number of Weyl nodes. Four nodes are reported to exist in a single plane in k space. The existence of a conical dispersion linked toWeyl nodes has yet to be shown experimen ...

AMER PHYSICAL SOC2020

Tolerancing the surface form of aspheric microlenses manufactured by wafer-level optics techniques

Toralf Scharf, Wilfried Noell, Jeremy Béguelin

Tolerancing is an important step toward the fabrication of high-quality and cost-effective lens surfaces. It is critical for wafer-level optics, when up to tens of thousands microlenses are fabricated in parallel and whose surfaces cannot be formed individ ...

OPTICAL SOC AMER2020

Enhanced Electron-Phonon Interaction in Multivalley Materials

Nicola Marzari, Marco Gibertini, Helmuth Berger, Thibault Daniel Pierre Sohier, Evgeniy Ponomarev

We report a combined experimental and theoretical investigation that reveals a new mechanism responsible for the enhancement of electron-phonon coupling in doped semiconductors in which multiple inequivalent valleys are simultaneously populated. Using Rama ...

AMER PHYSICAL SOC2019

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Pirouz Sohi

Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...

EPFL2019

Crystalline and correlated phases in two-dimensional transition metal dichalcogenides

Diego José Pasquier

This thesis is dedicated to the study of various aspects of the electronic structure of two-dimensional transition metal dichalcogenides (TMDs) of chemical composition MX

_2

(where M is a transition metal atom and X= S, Se, Te), using a combination of \te ...

EPFL2019

Probing alloy formation using different excitonic species: The particular case of InGaN

Nicolas Grandjean, Raphaël Butté, Gordon Jens Callsen

Since the 1960s, alloys are grouped into two classes, featuring bound states in the bandgap (I - GaP:N, ZnTe:O, etc.) or additional, non-discrete, band states (II - SiGe, GaAsP, InGaAs, etc.). Therefore, one can observe either a rich and informative zoo of ...

IEEE2019

Grain boundaries and quantum transport in monolayer MoS2

Kolyo Marinov

The growing research on two-dimensional materials reveals their exceptional physical properties and enormous potential for future applications and investigation of advanced physics phenomena. They represent the ultimate limit in terms of active channel thi ...

EPFL2018

Bulk diffusive relaxation mechanisms in optically excited topological insulators

Arnaud Magrez, Helmuth Berger, Philippe Bugnon, Alberto Crepaldi

The possibility to inject spin currents in topological insulators (TIs) by ultrashort optical pulses has stimulated intense studies of their out-of-equilibrium electronic properties. However, a comprehensive description of the electronic relaxation dynamic ...

Amer Physical Soc2017

Surface origin and control of resonance Raman scattering and surface band gap in indium nitride

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Terahertz surface modes and electron-phonon coupling on Bi2Se3(111)

Light-Induced Renormalization of the Dirac Quasiparticles in the Nodal-Line Semimetal ZrSiSe

Optical conductivity of the type-II Weyl semimetal TaIrTe4

Tolerancing the surface form of aspheric microlenses manufactured by wafer-level optics techniques

Enhanced Electron-Phonon Interaction in Multivalley Materials

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Crystalline and correlated phases in two-dimensional transition metal dichalcogenides

Probing alloy formation using different excitonic species: The particular case of InGaN

Grain boundaries and quantum transport in monolayer MoS2

Bulk diffusive relaxation mechanisms in optically excited topological insulators

Terahertz surface modes and electron-phonon coupling on Bi2Se3(111)

Light-Induced Renormalization of the Dirac Quasiparticles in the Nodal-Line Semimetal ZrSiSe

Optical conductivity of the type-II Weyl semimetal TaIrTe4

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Probing alloy formation using different excitonic species: The particular case of InGaN

Crystalline and correlated phases in two-dimensional transition metal dichalcogenides

Tolerancing the surface form of aspheric microlenses manufactured by wafer-level optics techniques

Bulk diffusive relaxation mechanisms in optically excited topological insulators

Grain boundaries and quantum transport in monolayer MoS2

Enhanced Electron-Phonon Interaction in Multivalley Materials