Plasmonic nanohole arrays on Si-Ge heterostructures: An approach for integrated biosensors
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
We show that it is possible to immobilize membrane proteins uniformly and reversibly as self-assembled (sub)monolayers on nitrilotriacetic acid-covered sensor surfaces via hexahistidine sequences present either in the protein or in lipid membranes. Fourier ...
Optical spectroscopy under varying temperature is used to investigate samples containing planes of self-assembled Ga1-xInxN quantum dots (0.15 < x < 0.20), embedded in a GaN matrix. The samples have been grown by molecular beam epitaxy on sapphire substrat ...
We have realized a micromechanical cantilever magnetometer with an integrated two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructuregrown by molecular-beam epitaxy(MBE). The cantilever was defined by lithography and wet-etched selectively ...
In this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as similar to270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by b ...
In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and hi ...
Using a highly sensitive silicon Hall sensor fabricated in a standard complementary metal-oxide-semiconductor (CMOS) technology, we detect a single magnetic microbead of 2.8 μm in diameter. The miniaturized sensor has an active area of 2.4×2.4 μm 2, a sens ...
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), a ...
A fully functional arrangement of a 2×1 array of active and self-detecting cantilevers, stress sensing metal-oxide-semiconductor transistors and thermal bimorph actuators was introduced. One of the two cantilevers was used as a reference while the other on ...
GaN/AlN quantum dots grown by molecular beam epitaxy either on silicon (111), sapphire or 6H-SiC (0001) substrate have been investigated using photoluminescence, cathodoluminescence, Fourier transform infrared spectroscopy and attenuated total reflection s ...
In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and ...