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Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

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Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

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Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes

Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

Electroluminescence of Single InGaN/GaN Micropyramids

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

Density control of GaN quantum dots on AlN single crystal

Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells