High-electron-mobility transistorA high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.
Saturation velocitySaturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. When this happens, the semiconductor is said to be in a state of velocity saturation. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as mobility of the carrier, which is a material property.
Semiconductor deviceA semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.
Integrated circuitAn integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of miniaturized transistors and other electronic components are integrated together on the chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete components, allowing a large transistor count.
Spin–lattice relaxationDuring nuclear magnetic resonance observations, spin–lattice relaxation is the mechanism by which the longitudinal component of the total nuclear magnetic moment vector (parallel to the constant magnetic field) exponentially relaxes from a higher energy, non-equilibrium state to thermodynamic equilibrium with its surroundings (the "lattice"). It is characterized by the spin–lattice relaxation time, a time constant known as T1.
Magnitude (astronomy)In astronomy, magnitude is measure of the brightness of an object, usually in a defined passband. An imprecise but systematic determination of the magnitude of objects was introduced in ancient times by Hipparchus. Magnitude values do not have a unit. The scale is logarithmic and defined such that a magnitude 1 star is exactly 100 times brighter than a magnitude 6 star. Thus each step of one magnitude is times brighter than the magnitude 1 higher.
Electromagnetic radiationIn physics, electromagnetic radiation (EMR) consists of waves of the electromagnetic (EM) field, which propagate through space and carry momentum and electromagnetic radiant energy. Types of EMR include radio waves, microwaves, infrared, (visible) light, ultraviolet, X-rays, and gamma rays, all of which are part of the electromagnetic spectrum. Classically, electromagnetic radiation consists of electromagnetic waves, which are synchronized oscillations of electric and magnetic fields.
CMOSComplementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.
SpectroscopySpectroscopy is the field of study that measures and interprets the electromagnetic spectra that result from the interaction between electromagnetic radiation and matter as a function of the wavelength or frequency of the radiation. Matter waves and acoustic waves can also be considered forms of radiative energy, and recently gravitational waves have been associated with a spectral signature in the context of the Laser Interferometer Gravitational-Wave Observatory (LIGO).
Indium gallium arsenideIndium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
