P–n junctionA p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.
Voltage sourceA voltage source is a two-terminal device which can maintain a fixed voltage. An ideal voltage source can maintain the fixed voltage independent of the load resistance or the output current. However, a real-world voltage source cannot supply unlimited current. A voltage source is the dual of a current source. Real-world sources of electrical energy, such as batteries and generators, can be modeled for analysis purposes as a combination of an ideal voltage source and additional combinations of impedance elements.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Electrical connectorComponents of an electrical circuit are electrically connected if an electric current can run between them through an electrical conductor. An electrical connector is an electromechanical device used to create an electrical connection between parts of an electrical circuit, or between different electrical circuits, thereby joining them into a larger circuit. Most electrical connectors have a gender - i.e. the male component, called a plug, connects to the female component, or socket.
CorrosionCorrosion is a natural process that converts a refined metal into a more chemically stable oxide. It is the gradual deterioration of materials (usually a metal) by chemical or electrochemical reaction with their environment. Corrosion engineering is the field dedicated to controlling and preventing corrosion. In the most common use of the word, this means electrochemical oxidation of metal in reaction with an oxidant such as oxygen, hydrogen or hydroxide. Rusting, the formation of iron oxides, is a well-known example of electrochemical corrosion.
LC circuitFile:LC parallel simple.svg|LC circuit diagram File:Low cost DCF77 receiver.jpg|LC circuit ''(left)'' consisting of ferrite coil and capacitor used as a tuned circuit in the receiver for a [[radio clock]] File:Tuned circuit of shortwave radio transmitter from 1938.jpg|Output tuned circuit of [[shortwave]] [[radio transmitter]] An LC circuit, also called a resonant circuit, tank circuit, or tuned circuit, is an electric circuit consisting of an inductor, represented by the letter L, and a capacitor, represented by the letter C, connected together.
VoltageVoltage, also known as electric pressure, electric tension, or (electric) potential difference, is the difference in electric potential between two points. In a static electric field, it corresponds to the work needed per unit of charge to move a test charge between the two points. In the International System of Units (SI), the derived unit for voltage is named volt. The voltage between points can be caused by the build-up of electric charge (e.g., a capacitor), and from an electromotive force (e.g.
Transparent conducting filmTransparent conducting films (TCFs) are thin films of optically transparent and electrically conductive material. They are an important component in a number of electronic devices including liquid-crystal displays, OLEDs, touchscreens and photovoltaics. While indium tin oxide (ITO) is the most widely used, alternatives include wider-spectrum transparent conductive oxides (TCOs), conductive polymers, metal grids and random metallic networks, carbon nanotubes (CNT), graphene, nanowire meshes and ultra thin metal films.
Quantum efficiencyThe term quantum efficiency (QE) may apply to incident photon to converted electron (IPCE) ratio of a photosensitive device, or it may refer to the TMR effect of a Magnetic Tunnel Junction. This article deals with the term as a measurement of a device's electrical sensitivity to light. In a charge-coupled device (CCD) or other photodetector, it is the ratio between the number of charge carriers collected at either terminal and the number of photons hitting the device's photoreactive surface.
Semiconductor device fabricationSemiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.
