Publication

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

, ,
2018
Conference paper

Abstract

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.

Official source

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Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

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Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams

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Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications

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Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications

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