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Switching event detection and self-termination programming circuit for energy efficient ReRAM memory arrays

Related publications (39)

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Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Behnoush Attarimashalkoubeh

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâs excellent performance properties such as high sw ...

EPFL2019

ReRAM From Material Study to CMOS Co-integration

Elmira Shahrabi

The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...

EPFL2019

Fine-Grain Checkpointing with In-Cache-Line Logging

James Richard Larus, David Teksen Aksun, Nachshon Cohen

Non-Volatile Memory offers the possibility of implementing high-performance, durable data structures. However, achieving performance comparable to well-designed data structures in non-persistent (transient) memory is difficult, primarily because of the cos ...

ACM2019

A Product Engine for Energy-Efficient Execution of Binary Neural Networks Using Resistive Memories

David Atienza Alonso, Marina Zapater Sancho, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Yasir Mahmood Qureshi, Edouard Giacomin, João Miguel Morgado Pereira Vieira

The need for running complex Machine Learning (ML) algorithms, such as Convolutional Neural Networks (CNNs), in edge devices, which are highly constrained in terms of computing power and energy, makes it important to execute such applications efficiently. ...

2019

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Hardware accelerators based on two-terminal non-volatile memories (NVMs) can potentially provide competitive speed and accuracy for the training of fully connected deep neural networks (FC-DNNs), with respect to GPUs and other digital accelerators. We rece ...

2019

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Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...

AMER CHEMICAL SOC2019

With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access memories ...

2018

Nowadays, the ubiquity of smart appliances in our everyday lives is increasingly strengthening the links between humans and machines. Beyond making our lives easier and more convenient, smart devices are now playing an important role in personalized health ...

EPFL2018

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

Mihai Adrian Ionescu, Igor Stolichnov

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...

IEEE2018

Organoid arrays

Matthias Lütolf, Nathalie Brandenberg

The invention provides methods for producing arrays of organoids, the arrays thereof and uses of such arrays. ...

2018