Publication
Switching event detection and self-termination programming circuit for energy efficient ReRAM memory arrays
Publications associées (39)
Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)
Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâs excellent performance properties such as high sw ...
EPFL2019ReRAM From Material Study to CMOS Co-integration
The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...
EPFL2019Fine-Grain Checkpointing with In-Cache-Line Logging
James Richard Larus, David Teksen Aksun, Nachshon Cohen
Non-Volatile Memory offers the possibility of implementing high-performance, durable data structures. However, achieving performance comparable to well-designed data structures in non-persistent (transient) memory is difficult, primarily because of the cos ...
ACM2019A Product Engine for Energy-Efficient Execution of Binary Neural Networks Using Resistive Memories
David Atienza Alonso, Marina Zapater Sancho, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Yasir Mahmood Qureshi, Edouard Giacomin, João Miguel Morgado Pereira Vieira
The need for running complex Machine Learning (ML) algorithms, such as Convolutional Neural Networks (CNNs), in edge devices, which are highly constrained in terms of computing power and energy, makes it important to execute such applications efficiently. ...
2019Training fully connected networks with resistive memories: impact of device failures
Giorgio Cristiano, Massimo Giordano, Martina Bodini
Hardware accelerators based on two-terminal non-volatile memories (NVMs) can potentially provide competitive speed and accuracy for the training of fully connected deep neural networks (FC-DNNs), with respect to GPUs and other digital accelerators. We rece ...
2019Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)
Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Carlo Ricciardi, Cecilia Giovinazzo, Oguz Tolga Celik
Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...
AMER CHEMICAL SOC2019Resistive Switching Memory Architecture Based on Polarity Controllable Selectors
Alexandre Sébastien Julien Levisse, Pierre-Emmanuel Julien Marc Gaillardon
With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access memories ...
2018Hardware / Software Architectural and Technological Exploration for Energy-Efficient and Reliable Biomedical Devices
Nowadays, the ubiquity of smart appliances in our everyday lives is increasingly strengthening the links between humans and machines. Beyond making our lives easier and more convenient, smart devices are now playing an important role in personalized health ...
EPFL2018Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices
Mihai Adrian Ionescu, Igor Stolichnov
Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...
IEEE2018Organoid arrays
Matthias Lütolf, Nathalie Brandenberg
The invention provides methods for producing arrays of organoids, the arrays thereof and uses of such arrays. ...
2018