Publications related to Exploration of Negative Capacitance Devices and Technologies

A Survey on Low-Power Techniques with Emerging Technologies: From Devices to Systems

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon

Nowadays, power consumption is one of the main limitations of electronic systems. In this context, novel and emerging devices provide us with new opportunities to keep the trend to low-power design. In this survey paper, we present a transversal survey on ...

Assoc Computing Machinery2015

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Mihai Adrian Ionescu, Didier Bouvet, Antonios Bazigos, Elizabeth Buitrago Godinez, Sara Rigante, Paolo Scarbolo

Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technolo ...

Amer Chemical Soc2015

Self-aligned normally-off metal-oxide-semiconductor n(++)GaN/InAlN/GaN high electron mobility transistors

Nicolas Grandjean, Jean-François Carlin

Self-aligned normally-off n(++)GaN/InAlN/AlN/GaN MOS HEMTs with a recessed gate show scalable threshold voltage between 1.3 to 3.7V, which increases with the gate oxide thickness. Al2O3 or HfO2 gate insulators were grown by ALD at 100 degrees C so that one ...

Wiley-V C H Verlag Gmbh2015

On the Design of a Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Giovanni De Micheli, Eduardo Sanchez, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Hassan Ghasemzadeh Mohammadi

This paper first explores the effects of faults on circuits implemented with controllable-polarity transistors. We propose a new fault model that suits the characteristics of these devices, and report the results of a SPICE-based analysis of the effects of ...

IEEE2015

Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors (invited)

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Michele De Marchi

In this paper, we introduce the different modes of operation achievable with Three-Independent-Gate Field-Effect Transistors (TIGFETs) and report results on fabricated devices including: (i) the dynamic reconfiguration of the device polarity; (ii) t ...

2015

Compact modeling of DG-Tunnel FET for Verilog-A implementation

Mihai Adrian Ionescu, Antonios Bazigos, Luca De Michielis, Arnab Biswas

In this work, a compact model based on an analytical closed form solution of the 1D Poisson's equation for a double-gate Tunnel FET is derived. Furthermore, the current levels are estimated by implementing an algorithm based on the Kane's band-to-band tunn ...

IEEE2015

Thickness-dependent mobility in two-dimensional MoS2

Andras Kis, Adrien Victor Allain, Dominik Sebastian Lembke

Two-dimensional (2D) semiconductors such as mono and few-layer molybdenum disulphide (MoS2) are very promising for integration in future electronics as they represent the ultimate miniaturization limit in the vertical direction. While monolayer MoS2 attrac ...

Royal Soc Chemistry2015

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Exploration of Negative Capacitance Devices and Technologies

Practical Applications of Tunnel Field Effect Transistors

A Survey on Low-Power Techniques with Emerging Technologies: From Devices to Systems

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Modeling Junctionless Metal-Oxide-Semiconductor Field-Effect Transistor

High-Frequency Scaled MoS2 Transistors

Self-aligned normally-off metal-oxide-semiconductor n(++)GaN/InAlN/GaN high electron mobility transistors

On the Design of a Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors (invited)

Compact modeling of DG-Tunnel FET for Verilog-A implementation

Thickness-dependent mobility in two-dimensional MoS2

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Practical Applications of Tunnel Field Effect Transistors

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

High-Frequency Scaled MoS2 Transistors

Modeling Junctionless Metal-Oxide-Semiconductor Field-Effect Transistor

On the Design of a Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors (invited)

Thickness-dependent mobility in two-dimensional MoS2

Compact modeling of DG-Tunnel FET for Verilog-A implementation

A Survey on Low-Power Techniques with Emerging Technologies: From Devices to Systems

Self-aligned normally-off metal-oxide-semiconductor n(++)GaN/InAlN/GaN high electron mobility transistors