Crystal Phase Engineering in III-V Semiconductor Films:
from Epitaxy to Devices
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
This work discusses the near edge photoluminescence and reflectivity of GaN layers grown on sapphire using three different methods. Particular emphasis is given to the importance of strain effects on intrinsic properties, as obtained from reflectivity, and ...
We have recently shown that in II-VI/III-V heterojunctions and related devices fabricated by molecular beam epitaxy, the II/VI flux ratio employed during the early stages of II-VI growth can be used to control the local interface composition and the band a ...
We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detect ...
The increase of the complexity in semiconductor structures raises more and more the need for local evaluation techniques. For example, laser structures with graded-index waveguides are now widespread, but the characterisation of the shape of the gradient i ...
Using in situ hydrogen desorption before the growth of the 12nm thick active InGaAs layer over V-grooves, operation of gain coupled DFB lasers at 989nm is achieved al room temperature. As-cleaved lasers, 600 mu m long, have threshold current densities as l ...
The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge disconti ...
A study of the formation of In- and Au-GaAs(100) interfaces is reported. The metal overlayers are deposited in ultrahigh vacuum on room-temperature (RT) and low-temperature (LT) (100)GaAs grown by molecular-beam epitaxy, following the evaporation of a prot ...
The transformation from pseudomorphic to dislocated and back to pseudomorphic growth with increasing coverage is reported for molecular beam epitaxy of Ag on Pt(111). Below a critical size of 200 Angstrom two-dimensional Ag islands grow coherently strained ...
Fully processed VLSI GaAs MESFET circuits, available through the MOSIS service, have recently been shown to be electrically stable after 3-h thermal cycles at 500-degrees-C. It is therefore feasible to epitaxially regrow photonic device heterostructures di ...
We tried to apply the mechanism of surface photovoltage (SPV) to a particular class of semiconductor heterojunctions, those having staggered gaps, with the aim of photoinducing charges of opposite sign at the interface notches and of creating a dipole that ...
