Crystal Phase Engineering in III-V Semiconductor Films:
from Epitaxy to Devices
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Amongst the new precursors for the III component in MOVPE there are numerous nitrogen containing compounds. Using those compounds, besides the electrical and optical quality of the grown material, the question of incorporation of nitrogen arises. We presen ...
We have modified the Schottky-barrer height of Si overlayers on Ag(111) substrates by means of Cs intralayers of different thicknesses. We also found a correlation between these changes and those of the work function, which makes it possible to measure the ...
We report a high-resolution core-level spectroscopy study of the (4 x 2)-c(8 x 2) GaAs(100) surface prepared by thermal decapping of surfaces grown by molecular-beam epitaxy. Ga and As 3d core levels are analyzed using very strict parameter conditions, and ...
It is demonstrated that the concept of surfactant applies to the epitaxial growth of highly strained III-V semiconductors. The pseudomorphic growth regime of InAs on GaAs(001) is extended from 1.5 to 6 monolayers by the use of Te as surfactant. This delaye ...
We have studied the electrical characteristics of p‐GaAs/n‐Si (100) heterojunction diodes grown by molecular beam epitaxy in an effort to determine the interface polarity. A Ga or As pre‐exposure was used prior to the growth of p‐GaAs on n‐Si substrates to ...
N-type GaAs substrates have been exposed to zinc atmospheres at 600-800 deg.C and focused light from a Kr-ion laser at 647.1 nm. Etch pits are generated at optical densities of 0.2-10 KW/cm2 and exposure times of 5-60 minutes. They are characterised by a s ...
A Hall mobility as high as 176,200 cm2V-1s-1 at 77 K with N(d)-N(a) = 1.3 x 10(14) cm-3 has been obtained by adjusting the substrate and the phosphine cracker temperatures. The 2 K photoluminescence spectra show finely resolved excitonic transitions for la ...
The local deposition of metal structures by thermal dissociation of trimethylaluminium, dimethylzinc and dimethylcadmium on GaAs surfaces heated by a CW krypton laser has been investigated. Piles of amorphous aluminium and zinc and crystalline structures o ...
On selected GaAs laser diodes, prepared by an epitaxial solution growth method, the temperature dependence of threshold current density and the net density gradient at the p-n junction have been measured. The relationship between these two parameters has b ...
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of ma ...
