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Theory and Computation of Hall Scattering Factor in Graphene

Related publications (34)

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Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

Camilla Arietta Vael-Garn

Polymeric semiconductors have gained significant attention in the field of organic electronics due to their unique properties and potential applications. Through their ability to transport charge carriers and to absorb or emit light, they have attracted mu ...

EPFL2023

Scrutinizing thermally stimulated current transients originating from trapped charges in organic semiconductors: A drift-diffusion study

Beat Ruhstaller

Thermally stimulated current (TSC) is a widely used technique to assess trap states and extract their density, energy, and capture rate using analytical expressions. In many cases, the latter are derived from physical models pertaining to inorganic semicon ...

AIP Publishing2022

The strength of the electron-hole interaction in bulk semiconductors is not only determined by the dielectric environment, but also depends on the presence of other quasiparticles - free charge carriers or phonons - that populate the system. In the former ...

EPFL2019

In this paper, we develop an explicit model to predict the dc electrical behavior in ultrathin surrounding gate junctionless (JL) nanowire field-effect transistors (FETs). The proposed model considers 2-D electrical and geometrical confinements of carrier ...

2019

Transition metal dichalcogenides (TMDs) in the 1T polymorph are subject to a rich variety of periodic lattice distortions, often referred to as charge-density waves (CDWs) when not too strong. We study from first principles the fermiology and phonon disper ...

AMER PHYSICAL SOC2019

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This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena influencing this technology are discussed. The low-temperature transfer char ...

2018

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Sonia Conesa Boj

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation of these nanostructures into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowir ...

Royal Society of Chemistry2017

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The ...

Amer Physical Soc2016

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The semimetallic, two-dimensional layered transition metal dichalcogenide WTe2 has raised considerable interest due to its huge, non-saturating magnetoresistance. While for the origin of this effect, a close-toideal balance of electrons and holes has been ...

Royal Soc Chemistry2016

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Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015