Optimized electrochemical breakdown etching using temporal voltage variation for formation of nanopores in a silicon membrane

Dielectric breakdown etching is a well-known method of making nanopores on thin (similar to 50 nm) dielectric membranes. However, voltage driven translocation of biomolecules through such nanopores becomes extremely fast. For improved detection, for instance by the current blockage, a high-aspect-ratio nanopore could be beneficial for slowing down the translocation. High-aspect-ratio nanopore on silicon fabrication requires a well-controlled process and is dependent on specific crystal orientation, dopant type and resistivity of substrate. Therefore, an optimized method of processing high-aspect-ratio nanopores is necessary considering the advantage of a silicon membrane being able to be integrated with standard CMOS processing. Here, we present an optimized fabrication method for mass-producing a single and an array of nanopores on a thick (2 mu m) silicon device layer based on a silicon-on-insulator (SOI) wafer. A method of temporal voltage variation is exploited to optimize the etching parameters for the nanopore formation during electrochemical breakdown etching, diameters of nanopores around 12 nm have been achieved. Besides, the correlation between the parameters of etching and nanopore diameter is deduced. The processed high-aspect-ratio nanopore enables applications in single-molecule sensing such as DNA, exosomes, viruses, and protein markers. The developed process is inexpensive, fast and can be batch fabricated.