Publications related to Nanopillars Enabling III-V Integration on Si (100) and (111)

Correlations for photocatalytic activity and spectral features of the absorption band edge of TiO2 modified by thiourea

Doping of nanocrystalline TiO2 powders with sizes ranging from 9.5 nm up to 19.1 nnn was carried out with thiourea (TU) to introduce the C, N and S-species into the TiO2. The crystal size was determined by X-ray diffraction. Doped-TiO2 particles were color ...

2009

M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Nicolas Grandjean, Denis Martin, Tiankai Zhu

M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms roughness similar to 2.0 nm (5 ...

2009

Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj

Self-catalyzed growth of axial InxGa1-xAs/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the g ...

Institute of Physics2009

HREM studies of twins in Cd1−xZnxTe (x ≈ 0.04) thin films grown by molecular beam epitaxy

Nava Setter, Marco Cantoni

The microstructure of ferroelectric Cd1−xZnxTe (CZT) thin films with x ≈ 0.04 grown by molecular beam epitaxy has been studied by means of cross sectional high-resolution transmission electron microscopy (HREM). High- density {1 1 1} lamellar twins are fou ...

2009

Band gap opening at the 6H-SiC(0001) surface passivated by an epitaxial silicon oxynitride layer: A first-principles investigation

Alfredo Pasquarello, Fabien Devynck

Using hybrid density functionals, we investigate the origin of the large band gap experimentally observed at the 6H-SiC(0001) surface when passivated by an epitaxial silicon oxynitride layer. In order to distinguish the effects resulting from the interfaci ...

2008

All the Disorder Mechanisms in the 13:58 Phases Come Together. Out of the Modulated Confusion Rises the Remarkable Phase Ce12.60Cd58.68(2)

The compound

Ce_{12.60}Cd_{58.68(2)}

is a metrically commensurate representative of the incommensurately modulated phase

Ce_{13}Cd_{57+\delta}

. It is most likely a lock-in phase. The structure, which was solved using seeding of the modulation from thos ...

2008

In-Situ vs. Ex-Situ Nanocrystallization of Mn-Doped ZnO

László Forró, Arnaud Magrez, Duncan Thomas Lindsay Alexander, Zlatko Mickovic

Following the current interest in transition metal doped dielectrics for spintronic applications, Mn-doped ZnO is being made by thermal decomposition of Mn-doped hydrozincite,  (MnxZn1–x)5(OH)6–2n (CO3)1+n, precursors that have been prepared by a novel syn ...

2008

Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires

Anna Fontcuberta i Morral, Père Roca i Cabarrocas

The occurrence of heterostructures of cubic silicon/hexagonal silicon as disks defined along the nanowire < 111 > growth direction is reviewed in detail for Si nanowires obtained using Cu as catalyst. Detailed measurements on the structural properties of b ...

American Institute of Physics2008

Metallic Nanowires by Full Wafer Stencil Lithography

Jürgen Brugger, Luis Guillermo Villanueva Torrijo, Andreea Veronica Savu, Marc Antonius Friedrich van den Boogaart, Oscar Vazquez Mena, Katrin Sidler Arnet

Aluminum and gold nanowires were fabricated using 100 mm stencil wafers containing nanoslits fabricated with a focused ion beam. The stencils were aligned and the nanowires deposited on a substrate with predefined electrical pads. The morphology and resist ...

2008

Nanostencil lithography for nanowire patterning

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart

Stencil lithography is an innovative method for patterning that has a great flexibility from many points of view. It is based on shadow mask evaporation using thin silicon nitride membranes that allow the patterning of sub-100 nm features up to 100 μm in a ...

2006

Nanopillars Enabling III-V Integration on Si (100) and (111)

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Correlations for photocatalytic activity and spectral features of the absorption band edge of TiO2 modified by thiourea

M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures

HREM studies of twins in Cd1−xZnxTe (x ≈ 0.04) thin films grown by molecular beam epitaxy

Band gap opening at the 6H-SiC(0001) surface passivated by an epitaxial silicon oxynitride layer: A first-principles investigation

All the Disorder Mechanisms in the 13:58 Phases Come Together. Out of the Modulated Confusion Rises the Remarkable Phase Ce12.60Cd58.68(2)

In-Situ vs. Ex-Situ Nanocrystallization of Mn-Doped ZnO

Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires

Metallic Nanowires by Full Wafer Stencil Lithography

Nanostencil lithography for nanowire patterning

Band gap opening at the 6H-SiC(0001) surface passivated by an epitaxial silicon oxynitride layer: A first-principles investigation

HREM studies of twins in Cd1−xZnxTe (x ≈ 0.04) thin films grown by molecular beam epitaxy

Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires

M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

In-Situ vs. Ex-Situ Nanocrystallization of Mn-Doped ZnO

Nanostencil lithography for nanowire patterning

Metallic Nanowires by Full Wafer Stencil Lithography

Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures

All the Disorder Mechanisms in the 13:58 Phases Come Together. Out of the Modulated Confusion Rises the Remarkable Phase Ce12.60Cd58.68(2)

Correlations for photocatalytic activity and spectral features of the absorption band edge of TiO2 modified by thiourea