Nanopillars Enabling III-V Integration on Si (100) and (111)
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The fabrication of interdigitated titanium nanoelectrode arrays of 50 nm in width and spacing is described in this work. The nanoarrays have been realized using a Ga+ focused ion beam (FIB). FIB milling is typically accompanied by redeposition of removed m ...
The use of chemical nanopatterns through nanoimprint lithography ato align a nematic liquid crystal (LC) in LC cells was described. It was found that the ratio of areas with different surface-aligning helped in the polar orientation of LC, while the azimut ...
Silicon has become the most important material for the semiconductor industry, due to several advantages like good heat conductance or the high quality of its oxide. Nevertheless, for opto-electronic devices, the limitation of its indirect band-gap has ant ...
A direct-bonded GaAs/InGaAs solar cell is demonstrated. The direct-bonded interconnect between subcells of this two-junction cell enables monolithic interconnection without threading dislocations and planar defects that typically arise during lattice-misma ...
This communication reports on the growth of highly uniform KNbO3 nanowires exhibiting a narrow diameter distribution around 60 nm and a length-to-width ratio up to 100. The nanowires were prepared by a hydrothermal route, which enables simple, gram-scale p ...
In this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as similar to270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by b ...
The organic polymers incorporating inorganic nanoparticles can result in material possessing with unique size-dependent properties, such as mechanical, optical, electrical, thermal and magnetic, that can be istinctively conveyed into the composite by the s ...
The possibility of using surface-adsorbed monolayers on oxidized GaAs single crystals is investigated to explore liquid crystal (LC) wettability and alignment. A technological process is developed to chemically activate the GaAs surface with a view to perf ...
Triangular (111) and square-shaped (100) Pb(Zr,Ti)O-3 single crystallites with lateral dimensions down to 50 nm and thickness of 20 nm have been grown using lithography-modulated self-assembly in an in situ sputter process. Epitaxial (111)-oriented Pt on a ...
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), a ...