ScintillatorA scintillator ('sɪntɪleɪtər ) is a material that exhibits scintillation, the property of luminescence, when excited by ionizing radiation. Luminescent materials, when struck by an incoming particle, absorb its energy and scintillate (i.e. re-emit the absorbed energy in the form of light). Sometimes, the excited state is metastable, so the relaxation back down from the excited state to lower states is delayed (necessitating anywhere from a few nanoseconds to hours depending on the material).
Gamma spectroscopyGamma-ray spectroscopy is the qualitative study of the energy spectra of gamma-ray sources, such as in the nuclear industry, geochemical investigation, and astrophysics. Gamma-ray spectrometry, on the other hand, is the method used to acquire a quantitative spectrum measurement. Most radioactive sources produce gamma rays, which are of various energies and intensities. When these emissions are detected and analyzed with a spectroscopy system, a gamma-ray energy spectrum can be produced.
Scintillation counterA scintillation counter is an instrument for detecting and measuring ionizing radiation by using the excitation effect of incident radiation on a scintillating material, and detecting the resultant light pulses. It consists of a scintillator which generates photons in response to incident radiation, a sensitive photodetector (usually a photomultiplier tube (PMT), a charge-coupled device (CCD) camera, or a photodiode), which converts the light to an electrical signal and electronics to process this signal.
Active-pixel sensorAn active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor.
BiCMOSBipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS (complementary metal–oxide–semiconductor) logic gate, into a single integrated circuit. In more recent times the bipolar processes have been extended to include high mobility devices using silicon–germanium junctions.
Photomultiplier tubePhotomultiplier tubes (photomultipliers or PMTs for short) are extremely sensitive detectors of light in the ultraviolet, visible, and near-infrared ranges of the electromagnetic spectrum. They are members of the class of vacuum tubes, more specifically vacuum phototubes. These detectors multiply the current produced by incident light by as much as 100 million times or 108 (i.e., 160 dB), in multiple dynode stages, enabling (for example) individual photons to be detected when the incident flux of light is low.
Avalanche photodiodeAn avalanche photodiode (APD) is a highly sensitive semiconductor photodiode detector that exploits the photoelectric effect to convert light into electricity. From a functional standpoint, they can be regarded as the semiconductor analog of photomultiplier tubes. The avalanche photodiode (APD) was invented by Japanese engineer Jun-ichi Nishizawa in 1952. However, study of avalanche breakdown, microplasma defects in silicon and germanium and the investigation of optical detection using p-n junctions predate this patent.
Electron–positron annihilationElectron–positron annihilation occurs when an electron (_Electron) and a positron (_Positron, the electron's antiparticle) collide. At low energies, the result of the collision is the annihilation of the electron and positron, and the creation of energetic photons: _Electron + _Positron → _Photon + _Photon At high energies, other particles, such as B mesons or the W and Z bosons, can be created. All processes must satisfy a number of conservation laws, including: Conservation of electric charge.
65 nm processThe 65 nm process is an advanced lithographic node used in volume CMOS (MOSFET) semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC and Chartered were also producing 65 nm chips.
RadiationIn physics, radiation is the emission or transmission of energy in the form of waves or particles through space or through a material medium. This includes: electromagnetic radiation, such as radio waves, microwaves, infrared, visible light, ultraviolet, x-rays, and gamma radiation (γ) particle radiation, such as alpha radiation (α), beta radiation (β), proton radiation and neutron radiation (particles of non-zero rest energy) acoustic radiation, such as ultrasound, sound, and seismic waves (dependent on a physical transmission medium) gravitational radiation, that takes the form of gravitational waves, or ripples in the curvature of spacetime Radiation is often categorized as either ionizing or non-ionizing depending on the energy of the radiated particles.
