Publication

A perspective on multi-channel technology for the next-generation of GaN power devices

Related publications (60)

Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

Wide-band-gap (WBG) power semiconductor devices are gaining an increasing interest in power circuits, as they exhibit a low specific ON-resistance (RON) while providing a high blocking voltage. The energy dissipation corresponding to resonantly charging an ...

2020

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Halil Kerim Yildirim, Luca Nela, Catherine Erine, Kai Cheng

Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led to a significant increase in the device conductivity while maintaining high breakdown voltage, resultin ...

2020

Negative Resistance in Cascode Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

Cascode topology which includes a high-voltage GaN and a low-voltage Si transistor is an attractive device concept, which uses the low ON-resistance of GaN while still being compatible with Si gate drivers. It demonstrates the highest threshold voltage amo ...

2020

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Clarissa Convertino

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

EPFL2020

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Giovanni Santoruvo

In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are simultaneously controlled by lateral in-plane gates formed with the ...

2020

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Pirouz Sohi

Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...

EPFL2019

Tri-gate technologies for high-performance power GaN devices

Jun Ma

GaN-based electronic devices have great potential for future power applications, thanks to their wide band-gap, high breakdown electric field, and high electron mobility. In addition, these devices can be integrated on large-size Si substrates and enable n ...

EPFL2019

New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

The low ON-resistance of wide-band-gap (WBG) transistors is a key feature for efficient power converters, however, the anomalous loss in their output capacitance (COSS) severely limits their performance at high switching frequencies. Characterizing COSS-lo ...

2019

A Low-Power Microwave HEMT $LC$ Oscillator Operating Down to 1.4 K

Giovanni Boero, Nergiz Sahin Solmaz, Alessandro Valentino Matheoud

High-electron-mobility transistors (HEMTs) based on 2-D electron gases (2DEGs) in III-V heterostructures have superior mobility compared with the transistors of silicon-based complementary metal-oxide-semiconductor technologies. The large mobility makes th ...

2019

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

2019

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