A perspective on multi-channel technology for the next-generation of GaN power devices
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P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Only Popovici et al. [1] have published the results of a Raman study on p type GaN. In the present communication, we report on the interaction of the free hole ...
The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating, said substrate being coated with a buffer layer, wherein: a ...
A transmission electron microscopy study of a wide range of p-type GaN samples reveals that high Mg doping has a strong influence on the polarity of GaN. The main characteristic of Mg-doped metal organic vapour phase epitaxy (MOVPE) and bulk GaN is the pre ...
We have measured the temperature dependence of the mobility of the two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN substrates. The linear dependence of the inverse mobility on temperature at temperatures below 50 K indicates th ...
InAlAs/InGaAs/InP based high electron mobility transistor devices have been structurally and electrically characterized, using transmission electron microscopy and Raman spectroscopy and measuring Hall mobilities. The InGaAs lattice matched channels, with ...
In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH), while maintaining a low specific on resistance (RON,SP) and high current density ( ...
