Publication

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Related publications (135)

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

In the past half-century, the digital revolution completely changed the world we live in and the ways we experience it. Over this period, the underlying force supporting the continuous technological development has been the geometrical scaling of transisto ...

EPFL2020

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

Elison de Nazareth Matioli, Halil Kerim Yildirim, Mohammad Samizadeh Nikooytabalvandani, Armin Jafari, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili, Furkan Karakaya

Soft-switching power converters based on wide-band-gap (WBG) transistors offer superior efficiency and power density advantages. However, at high frequencies, loss behavior varies significantly between different WBG technologies. This includes losses relat ...

2020

, ,

In this work, we present the investigation of the combination of p-GaN gate and tri-gate structures to achieve normally-off operation on GaN-on-Si MOSFETs. We have developed and optimized a selective and low-damage p-GaN etching recipe to stop at the AlGaN ...

IEEE2020

, ,

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

, , ,

In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are simultaneously controlled by lateral in-plane gates formed with the ...

2020

, , ,

In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thickness ...

2020

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019

GaN-based electronic devices have great potential for future power applications, thanks to their wide band-gap, high breakdown electric field, and high electron mobility. In addition, these devices can be integrated on large-size Si substrates and enable n ...

EPFL2019