LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor
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During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off-state to the on-state (saturation). The additional voltage drop due to the quasi-saturation of the junction hardly depends on the DC-link ...
During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off.state to the on-state (saturation). The additional voltage drop due to the quasi.saturation of the junction hardly depends on the DC-link ...
