Publication

Room-temperature electrical control of polarization and emission angle in a cavity-integrated 2D pulsed LED

Related publications (58)

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Achievements in slow and fast light in optical fibres

Luc Thévenaz

The ubiquitous role occupied by optical fibres in modern photonic systems has steadily stimulated research to realize slow and fast light devices directly in this close-to-perfect transmission line. This potentially offers the key advantage of a direct and ...

IEEE2008

Enhanced spontaneous emission in a photonic-crystal light-emitting diode

Laurent Balet, Blandine Alloing

We report direct evidence of enhanced spontaneous emission in a photonic-crystal (PhC) light-emitting diode. The device consists of p-i-n heterojunction embedded in a suspended membrane, comprising a layer of self-assembled quantum dots. Current is injecte ...

American Institute of Physics2008

Slow and fast light in optical fibres

Luc Thévenaz

The ubiquitous role of optical fibres in modern photonic systems has stimulated research to realize slow and fast light devices directly in this close-to-perfect transmission line. Recent progress in developing optically controlled delays in optical fibres ...

Nature Publishing Group2008

Light-emitting material.

Michael Graetzel, Mohammad Khaja Nazeeruddin

This invention pertains to light emitting materials comprising novel ortho-metalated transition metal complexes [C^N] 2 ML comprising two orthometalated ligands having imidazole moieties and an ancillary ligand of ²-diketonate type. It has been surprisingl ...

2008

Spontaneous polarization buildup in a room-temperature polariton laser

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Gabriel Christmann

We observe the buildup of strong (similar to 50%) spontaneous vector polarization in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stokes vector of emitted light changes its orientation randomly from one ...

2008

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...

EPFL2007

Optical mode control in VCSEL-based photonic crystal heterostructures

Lars Lundeberg

The field of photonic crystals is a rapidly developing branch of modern optics. Photonic crystals are believed to be the cornerstone for a wide range of new photonic devices controlling the confinement and propagation of light. These artificial structures ...

EPFL2007

Light-emitting material.

Michael Graetzel, Mohammad Khaja Nazeeruddin, Yongjoo Kim

Abstract of WO2007042474 This invention pertains to light emitting materials comprising novel ortho-metalated transition metal complexes [C^N]2ML, comprising chelate monoionic ligands (L), also called ancillary ligands. It has been surprisingly found that ...

2007

Polymeric MOEMS variable optical attenuator

Luis Guillermo Villanueva Torrijo, Victor Javier Cadarso Busto

In this letter, we take advantage of the high coefficient of thermal expansion (CTE) of a chemically amplified, epoxy-based negative polymer (SU-8) to define a low-power consumption polymeric variable optical attenuator that combines the working principles ...

2006

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Julien Dorsaz

Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...

EPFL2006