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An All-Digital 1 Mbps, 57 pJ/bit Bluetooth Low Energy (BLE) Backscatter ASIC in 65 nm CMOS

Related publications (64)

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Monolithic pixel sensors integrate the sensor matrix and readout in the same silicon die, and therefore present several advantages over the more largely used hybrid detectors in high-energy physics. They offer an easier detector assembly, lower cost, lower ...

EPFL2023

This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (

Piscataway2023

Random flip-flop: adding quantum randomness to digital circuits for improved cyber security, artificial intelligence and more

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Mario Stipcevic

Harnessing quantum randomness for the generation of random numbers is an important concept crucial for information security and many other computer-related applications. Quantum random number generators (QRNGs) are evolving from bulky, slow, and expensive ...

SPIE2021

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Deeply-scaled three-dimensional (3D) Multi-Processor Systems-on-Chip (MPSoCs) enable high performance and massive communication bandwidth for next-generation computing. However, as process nodes shrink, temperature-dependent leakage dramatically increases, ...

2020

Energy- and Cost-Efficient VLSI DSP Systems Design with Approximate Computing

Reza Ghanaatian Jahromi

Technology scaling has progressed to enable integrated circuits with extremely high density enabling systems of tremendous complexity with manageable power consumption. With the continuation of Moore's law for many years, electronic chips have been able to ...

EPFL2020

Enhanced-performance integrated Resonant Switched-Capacitor and Buck DC-DC converters for application in extreme radiation and magnetic field environments

Giacomo Ripamonti

DC-DC converters based on Application Specific Integrated Circuits (ASICs) have been developed in this doctoral work for the High-Luminosity Large Hadron Collider (HL-LHC) experiments at CERN. They step down the voltage from a 2.5 V line and supply a load ...

EPFL2020

Analysis of Functional Errors Produced by Long-Term Workload-Dependent BTI Degradation in Ultralow Power Processors

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Miguel Peon Quiros, Ruben Braojos Lopez, Loris Gérard Duch

Aging effects in digital circuits change the switching characteristics of their transistors, resulting in timing violations that can lead to functional errors at the system level. In particular, bias temperature instability (BTI) is a degradation effect th ...

2020

Understanding the diversity of the metal-organic framework ecosystem

Berend Smit, Seyedmohamad Moosavi, Daniele Ongari, Kevin Maik Jablonka, Peter George Boyd, Yongjin Lee

Millions of distinct metal-organic frameworks (MOFs) can be made by combining metal nodes and organic linkers. At present, over 90,000 MOFs have been synthesized and over 500,000 predicted. This raises the question whether a new experimental or predicted s ...

2020

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In CHES 2017, Jean et al. presented a paper on "Bit-Sliding" in which the authors proposed lightweight constructions for SPN based block ciphers like AES, PRESENT and SKINNY. The main idea behind these constructions was to reduce the length of the datapath ...

2020

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019