Publications related to III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

Christophe Ballif, Raphaël François Lemerle, Mathieu Gérard Boccard, Jan Haschke, Brahim Aissa

In this paper, we report the evolution of silicon heterojunction solar cell properties focusing, in particular, on the indium tin oxide (ITO) layers upon consecutive thermal annealing. We find that the charge carrier density

N_{\rm e}

of the ITO increase ...

2019

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

Nicolas Bologna

III-V semiconductor nanowires are, due to their unique properties, one of the most promising nanostructures developed in the last decades. However, the realization of commercial devices made of III-V nanowires, such as transistors and solar cells, has not ...

EPFL2019

Roll-to-Roll Deposition of Semiconducting 2D Nanoflake Films of Transition Metal Dichalcogenides for Optoelectronic Applications

Kevin Sivula, Rebekah Anne Wells, Charles Roger Jean Lhermitte, Hannah Elizabeth Johnson

Exfoliated transition metal dichalcogenide (TMD) nanomaterials possess remarkable and tunable semiconducting properties which make them competitive for use in ultrathin, flexible devices such as photodetectors, sensors, and photoelectrodes for solar energy ...

2019

Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Nicolas Tappy, Rajrupa Paul, Reza Zamani

Semiconductors made of earth-abundant elements, such as zinc phosphide, have the potential to substitute less abundant, highly functional compound semiconductors such as InAs or InP. Compound semiconductors in the form of nanowires could revolutionise appl ...

2019

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Chao Liu

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

Rapid Performance Optimization Method for Photoelectrodes

Sophia Haussener, Yannick Kenneth Gaudy

We report the development of a rapid method for the performance optimization of photoelectrodes. The method requires as an input incident photon-to-current efficiency (IPCE) measurements of a material at two or more wavelengths, an estimation of the comple ...

2019

Structural and microstructural studies on SiC-SiO2 ceramic composites

Ho-Yun Lee

In this study, SiC ceramic substrates were prepared with 99.5% silicon carbide powders which were came from waste silicon mud during the manufacturing process of solar cells. It is found that a SiO2 layer with 50 nm in thickness is present on the SiC surfa ...

2019

Liquid Assembly of Floating Nanomaterial Sheets for Transparent Electronics

Jürgen Brugger, Xiao Sheng Zhang, Henry Shao-Chi Yu, Zongming Su

A novel pattern strategy of a nanomaterial network that can self‐assemble onto prepatterned soft substrate to realize ultra‐transparent electronics is presented. The approach detailed is based on the combination of nanomaterials' self‐assembly at the water ...

2019

Physical vapour deposition of cyanine salts and their first application in organic electronic devices

Frank Nüesch, Jakob Heier, Antonia Neels, Léo Duchêne, Donatas Gesevicius

A symmetrical trimethine indocyanine dye chromophore was modified with the bistriflylimide anion to study the changes in Coulomb interactions, thermal stability and the volatility of the organic salt. The bulky bistriflylimide anion minimizes electrostatic ...

2019

Gallium‐Based Thin Films for Wearable Human Motion Sensors

Stéphanie Lacour, Ivan Furfaro, Laurent Mirko Dejace, Nathan Joseph Laubeuf

Wearable electronic circuits based on the films of gallium and its alloys offer promising implementations in health monitoring and gaming sensing applications. However, the complex rheology of liquid metals makes it challenging to manufacture thin gallium‐ ...

2019

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

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Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

Roll-to-Roll Deposition of Semiconducting 2D Nanoflake Films of Transition Metal Dichalcogenides for Optoelectronic Applications

Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

High performance Fully-vertical GaN-on-Si power MOSFETs

Rapid Performance Optimization Method for Photoelectrodes

Structural and microstructural studies on SiC-SiO2 ceramic composites

Liquid Assembly of Floating Nanomaterial Sheets for Transparent Electronics

Physical vapour deposition of cyanine salts and their first application in organic electronic devices

Gallium‐Based Thin Films for Wearable Human Motion Sensors

Physical vapour deposition of cyanine salts and their first application in organic electronic devices

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

Structural and microstructural studies on SiC-SiO2 ceramic composites

High performance Fully-vertical GaN-on-Si power MOSFETs

Gallium‐Based Thin Films for Wearable Human Motion Sensors

Rapid Performance Optimization Method for Photoelectrodes

Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

Liquid Assembly of Floating Nanomaterial Sheets for Transparent Electronics

Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

Roll-to-Roll Deposition of Semiconducting 2D Nanoflake Films of Transition Metal Dichalcogenides for Optoelectronic Applications