Parasitic element (electrical networks)In electrical networks, a parasitic element is a circuit element (resistance, inductance or capacitance) that is possessed by an electrical component but which it is not desirable for it to have for its intended purpose. For instance, a resistor is designed to possess resistance, but will also possess unwanted parasitic capacitance. Parasitic elements are unavoidable. All conductors possess resistance and inductance and the principles of duality ensure that where there is inductance, there will also be capacitance.
Muon-catalyzed fusionMuon-catalyzed fusion (abbreviated as μCF or MCF) is a process allowing nuclear fusion to take place at temperatures significantly lower than the temperatures required for thermonuclear fusion, even at room temperature or lower. It is one of the few known ways of catalyzing nuclear fusion reactions. Muons are unstable subatomic particles which are similar to electrons but 207 times more massive. If a muon replaces one of the electrons in a hydrogen molecule, the nuclei are consequently drawn 196 times closer than in a normal molecule, due to the reduced mass being 196 times the mass of an electron.
Very low frequencyVery low frequency or VLF is the ITU designation for radio frequencies (RF) in the range of 3–30 kHz, corresponding to wavelengths from 100 to 10 km, respectively. The band is also known as the myriameter band or myriameter wave as the wavelengths range from one to ten myriameters (an obsolete metric unit equal to 10 kilometers). Due to its limited bandwidth, audio (voice) transmission is highly impractical in this band, and therefore only low data rate coded signals are used.
Three-dimensional integrated circuitA three-dimensional integrated circuit (3D IC) is a MOS (metal-oxide semiconductor) integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.
Semiconductor device fabricationSemiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.
MicrofabricationMicrofabrication is the process of fabricating miniature structures of micrometre scales and smaller. Historically, the earliest microfabrication processes were used for integrated circuit fabrication, also known as "semiconductor manufacturing" or "semiconductor device fabrication". In the last two decades microelectromechanical systems (MEMS), microsystems (European usage), micromachines (Japanese terminology) and their subfields, microfluidics/lab-on-a-chip, optical MEMS (also called MOEMS), RF MEMS, PowerMEMS, BioMEMS and their extension into nanoscale (for example NEMS, for nano electro mechanical systems) have re-used, adapted or extended microfabrication methods.
Series and parallel circuitsTwo-terminal components and electrical networks can be connected in series or parallel. The resulting electrical network will have two terminals, and itself can participate in a series or parallel topology. Whether a two-terminal "object" is an electrical component (e.g. a resistor) or an electrical network (e.g. resistors in series) is a matter of perspective. This article will use "component" to refer to a two-terminal "object" that participate in the series/parallel networks.
Saturable reactorA saturable reactor in electrical engineering is a special form of inductor where the magnetic core can be deliberately saturated by a direct electric current in a control winding. Once saturated, the inductance of the saturable reactor drops dramatically. This decreases inductive reactance and allows increased flow of the alternating current (AC). Saturable reactors provide a very simple means to remotely and proportionally control the AC through a load such as an incandescent lamp; the AC current is roughly proportional to the direct current (DC) through the control winding.
Radio frequencyRadio frequency (RF) is the oscillation rate of an alternating electric current or voltage or of a magnetic, electric or electromagnetic field or mechanical system in the frequency range from around 20kHz to around 300GHz. This is roughly between the upper limit of audio frequencies and the lower limit of infrared frequencies. These are the frequencies at which energy from an oscillating current can radiate off a conductor into space as radio waves, so they are used in radio technology, among other uses.
Magnetic confinement fusionMagnetic confinement fusion is an approach to generate thermonuclear fusion power that uses magnetic fields to confine fusion fuel in the form of a plasma. Magnetic confinement is one of two major branches of fusion energy research, along with inertial confinement fusion. The magnetic approach began in the 1940s and absorbed the majority of subsequent development. Fusion reactions combine light atomic nuclei such as hydrogen to form heavier ones such as helium, producing energy.
