Threshold voltageThe threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.
Semiconductor deviceA semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.
First-magnitude starFirst-magnitude stars are the brightest stars in the night sky, with apparent magnitudes lower (i.e. brighter) than +1.50. Hipparchus, in the 1st century BC, introduced the magnitude scale. He allocated the first magnitude to the 20 brightest stars and the sixth magnitude to the faintest stars visible to the naked eye. In the 19th century, this ancient scale of apparent magnitude was logarithmically defined, so that a star of magnitude 1.00 is exactly 100 times as bright as one of 6.00.
High-κ dielectricIn the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.
Thermal oxidationIn microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer. The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react with it. The rate of oxide growth is often predicted by the Deal–Grove model. Thermal oxidation may be applied to different materials, but most commonly involves the oxidation of silicon substrates to produce silicon dioxide.
Photographic magnitudePhotographic magnitude (mph or mp ) is a measure of the relative brightness of a star or other astronomical object as imaged on a photographic film emulsion with a camera attached to a telescope. An object's apparent photographic magnitude depends on its intrinsic luminosity, its distance and any extinction of light by interstellar matter existing along the line of sight to the observer. Photographic observations have now been superseded by electronic photometry such as CCD charge-couple device cameras that convert the incoming light into an electric current by the photoelectric effect.
Seismic magnitude scalesSeismic magnitude scales are used to describe the overall strength or "size" of an earthquake. These are distinguished from seismic intensity scales that categorize the intensity or severity of ground shaking (quaking) caused by an earthquake at a given location. Magnitudes are usually determined from measurements of an earthquake's seismic waves as recorded on a seismogram. Magnitude scales vary on what aspect of the seismic waves are measured and how they are measured.
Multigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
Band gapIn solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band.
Moment magnitude scaleThe moment magnitude scale (MMS; denoted explicitly with or Mw, and generally implied with use of a single M for magnitude) is a measure of an earthquake's magnitude ("size" or strength) based on its seismic moment. It was defined in a 1979 paper by Thomas C. Hanks and Hiroo Kanamori. Similar to the local magnitude/Richter scale () defined by Charles Francis Richter in 1935, it uses a logarithmic scale; small earthquakes have approximately the same magnitudes on both scales.
