CMOSComplementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
WirelessWireless communication (or just wireless, when the context allows) is the transfer of information (telecommunication) between two or more points without the use of an electrical conductor, optical fiber or other continuous guided medium for the transfer. The most common wireless technologies use radio waves. With radio waves, intended distances can be short, such as a few meters for Bluetooth or as far as millions of kilometers for deep-space radio communications.
Self-aligned gateIn semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned to the edges of the source and drain. The use of self-aligned gates in MOS transistors is one of the key innovations that led to the large increase in computing power in the 1970s.
Self-phase modulationSelf-phase modulation (SPM) is a nonlinear optical effect of light–matter interaction. An ultrashort pulse of light, when travelling in a medium, will induce a varying refractive index of the medium due to the optical Kerr effect. This variation in refractive index will produce a phase shift in the pulse, leading to a change of the pulse's frequency spectrum. Self-phase modulation is an important effect in optical systems that use short, intense pulses of light, such as lasers and optical fiber communications systems.
Long DepressionThe Long Depression was a worldwide price and economic recession, beginning in 1873 and running either through March 1879, or 1896, depending on the metrics used. It was most severe in Europe and the United States, which had been experiencing strong economic growth fueled by the Second Industrial Revolution in the decade following the American Civil War. The episode was labeled the "Great Depression" at the time, and it held that designation until the Great Depression of the 1930s.
Potential applications of graphenePotential graphene applications include lightweight, thin, and flexible electric/photonics circuits, solar cells, and various medical, chemical and industrial processes enhanced or enabled by the use of new graphene materials. In 2008, graphene produced by exfoliation was one of the most expensive materials on Earth, with a sample the area of a cross section of a human hair costing more than 1,000asofApril2008(about100,000,000/cm2). Since then, exfoliation procedures have been scaled up, and now companies sell graphene in large quantities. Light meterA light meter is a device used to measure the amount of light. In photography, a light meter (more correctly an exposure meter) is used to determine the proper exposure for a photograph. The meter will include either a digital or analog calculator which displays the correct shutter speed and f-number for optimum exposure, given a certain lighting situation and film speed. Similarly, exposure meters are also used in the fields of cinematography and scenic design, in order to determine the optimum light level for a scene.
Insulated-gate bipolar transistorAn insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate (MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range.
Pulse-width modulationPulse-width modulation (PWM), or pulse-duration modulation (PDM), is a method of controlling the average power delivered by an electrical signal. The average value of voltage (and current) fed to the load is controlled by switching the supply between 0 and 100% at a rate faster than it takes the load to change significantly. The longer the switch is on, the higher the total power supplied to the load. Along with maximum power point tracking (MPPT), it is one of the primary methods of controlling the output of solar panels to that which can be utilized by a battery.
